NSVF4015SG4 RF Transistor for Low Noise Amplifier 12 V, 100 mA, f = 10 GHz typ. T This RF transistor is designed for low noise amplifier applications. www.onsemi.com MCPH package is suitable for use under high temperature environment because it has superior heat radiation characteristics. This RF transistor is AECQ101 qualified and PPAP capable for 12 V, 100 mA automotive applications. f = 10 Ghz typ. T RF Transistor Features Lownoise Use: NF = 1.2 dB typ. (f = 1 GHz) High Cutoff Frequency: f = 10 GHz typ. (V = 5 V) T CE ELECTRICAL CONNECTION 2 NPN High Gain: S21e = 17 dB typ. (f = 1 GHz) 1 MCPH4 Package is Pincompatible with SC82FL AECQ101 Qualified and PPAP Capable PbFree, Halogen Free and RoHS Compliance 1: Collector 2: Emitter 3 Typical Applications 3: Base 4: Emitter Low Noise Amplifier for Digital Radio Low Noise Amplifier for TV 2, 4 Low Noise Amplifier for FM Radio RF Amplifier for UHF Application MARKING DIAGRAM Specifications 4 3 GN ABSOLUTE MAXIMUM RATINGS at T = 25C 1 A 2 MCPH4 Rating Symbol Value Unit Collector to Base Voltage V 20 V CBO ORDERING INFORMATION Collector to Emitter Voltage V 12 V CEO See detailed ordering and shipping Emitter to Base Voltage V 2 V EBO information on page 10 of this data sheet. Collector Current I 100 mA C Collector Dissipation P 450 mW C Operating Junction and Storage T , T 55 to +150 C J stg Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: March, 2018 Rev. 0 NSFV4015SG4/D LOT No. LOT No.NSVF4015SG4 Table 1. ELECTRICAL CHARACTERISTICS at T = 25C (Note 1) A Value Min Typ Max Parameter Symbol Conditions Unit Collector Cutoff Current I V = 5 V, I = 0 A 1.0 A CBO CB E Emitter Cutoff Current I 1.0 V = 1 V, I = 0 A A EBO EB C DC Current Gain h V = 5 V, I = 50 mA 60 150 FE CE C GainBandwidth Product f V = 5 V, I = 30 mA 8 10 GHz T CE C 2 Forward Transfer Gain S21e 14 17 dB V = 5 V, I = 30 mA, f = 1 GHz CE C Noise Figure NF V = 5 V, I = 10 mA, f = 1 GHz 1.2 1.8 dB CE C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pay attention to handling since it is liable to be affected by static electricity due to the high frequency process adopted. www.onsemi.com 2