LOT No. LOT No. NSVF5501SK RF Transistor for Low Noise Amplifier 10 V, 70 mA, f = 5.5 GHz typ. RF Transistor T This RF transistor is designed for RF amplifier applications. SSFP package is contribute to down size of application because it is small www.onsemi.com surface mount package. This RF transistor is AECQ101 qualified and PPAP capable for automotive applications. 3 Features 1 2 High Cutoff Frequency: f = 5.5 GHz typ. (V = 5 V) T CE SOT623 / SSFP 2 High Gain: S21e = 11 dB typ. (f = 1 GHz) CASE 631AC 2 S21e = 19 dB typ. (f = 400 MHz) SSFP Package is Pincompatible with SOT623 ELECTRICAL CONNECTION NPN AECQ101 Qualified and PPAP Capable 3 These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 1 Typical Applications 1 : Base RF Amplifier for RKE 2 : Emitter RF Amplifier for ADAS 2 3 : Collector RF Amplifier for Remote Engine Starter MARKING DIAGRAM ZD ZD = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: July, 2018 Rev. 0 NSVF5501SK/DNSVF5501SK SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS at Ta = 25C Parameter Symbol Value Unit Collector to Base Voltage V 20 V CBO Collector to Emitter Voltage V 10 V CEO Emitter to Base Voltage V 3 V EBO Collector Current I 70 mA C Collector Dissipation P 250 mW C Operating Junction and Storage Temperature Tj, Tstg 55 to +150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS at Ta = 25C Value Min Typ Max Parameter Symbol Conditions Unit Collector Cutoff Current I V = 10 V, I = 0 A 0.1 A CBO CB E Emitter Cutoff Current I V = 2 V, I = 0 A 1 A EBO EB C DC Current Gain h V = 5 V, I = 10 mA 100 160 FE CE C GainBandwidth Product f 1 V = 3 V, I = 5 mA 3.0 4.5 GHz T CE C f 2 V = 5 V, I = 20 mA 5.5 GHz T CE C Output Capacitance Cob V = 10 V, f = 1 MHz 0.95 1.2 pF CB Reverse Transfer Capacitance Cre 0.6 pF 2 Forward Transfer Gain S21e 1 V = 5 V, I = 20 mA, f = 1 GHz 8 11 dB CE C 2 S21e 2 V = 5 V, I = 20 mA, f = 400 MHz 16 19 dB CE C Noise Figure NF V = 3 V, I = 5 mA, f = 1 GHz 1.9 dB CE C Z = Z = 50 S L Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pay attention to handling since it is liable to be affected by static electricity due to the highfrequency process adopted. www.onsemi.com 2