N-Channel JFET 25 V, 20 to 40 mA, 40 mS, Dual NSVJ6904DSB6 The NSVJ6904DSB6 is a composite type of JFET designed for compact size and high efficiency which can achieve high gain www.onsemi.com performance. This AECQ101 qualified and PPAP capable device is suited for automotive applications. ELECTRICAL CONNECTION Features NChannel Large yfs 65 4 Small Ciss 1 : Drain 1 Ultralow Noise Figure 2 : NC CPH6 Package is PinCompatible with SC74 3 : Drain 2 4 : Gate 2 AECQ101 Qualified and PPAP Capable 5 : Source 1 / Source 2 Mounting Area is Greatly Reduced by Incorporating Two JFETs of 6 : Gate 1 the NSVJ3910SB3 in One Package of CPH6 Compared with Using 1 23 Two Separate Packages Typical Applications MARKING AM Tuner RF Amplification DIAGRAM Low Noise Amplifier Specifications 6 5 4 ABSOLUTE MAXIMUM RATINGS (T = 25C) a 1 2 3 CPH6 Symbo l Parameter Value Unit CASE 318BD Drain to Source Voltage V 25 V DSX ORDERING INFORMATION Gate to Drain Voltage V 25 V GDS See detailed ordering, marking and shipping information in the Gate Current I 10 mA G package dimensions section on page 4 of this data sheet. Drain Current I 50 mA D Allowable Power Dissipation 1 unit P 400 mW D Total Power Dissipation P 700 mW T Operating Junction and Storage Temperature T T 55 to +150 C J, Stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: July, 2019 Rev. 1 NSVJ6904DSB6/D 1P LOT NoNSVJ6904DSB6 ELECTRICAL CHARACTERISTICS (T = 25C, (Note 1)) J Characteristic Symbol Conditions Min Typ Max Unit Gate to Drain Breakdown Voltage V I = 10 A, V = 0 V 25 V (BR)GDS G DS Gate to Source Leakage Current I V = 10 V, V = 0 V 1.0 nA GSS GS DS Cutoff Voltage V V = 5 V, I = 100 A 0.6 1.2 1.8 V GS(off) DS D ZeroGate Voltage Drain Current I V = 5 V, V = 0 V 20 40 mA DSS DS GS Forward Transfer Admittance yfs V = 5 V, V = 0 V, f = 1 kHz 30 40 mS DS GS Input Capacitance Ciss V = 5 V, V = 0 V, f = 1 MHz 6.0 pF DS GS Reverse Transfer Capacitance Crss 2.3 pF Noise Figure NF V = 5 V, V = 0 V, f = 100 MHz 2.1 2.8 dB DS GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. The specifications shown above are for each individual JFET. www.onsemi.com 2