Product Technical OrOrdderer Folder Support NowNow InterFET 2N5484-5-6 2N5484, 2N5485, 2N5486 N-Channel JFET Features SOT23 Top View InterFET N0026S Geometry Low Noise: 4 nV/Hz Typical Source 1 Low Ciss: 4.3pF Typical Low Leakage: 10pA Typical Gate 3 RoHS Compliant Drain 2 SMT, TH, and Bare Die Package options. Applications TO-92 Bottom View VHF/UHF Amplifiers Description Gate 3 The -25V InterFET 2N5484, 2N5485, and 2N5486 Drain 2 are targeted for low noise low leakage VHF/UHF amplifier designs. Gate leakages are typically less Source 1 than 10pA at room temperatures. Product Summary Parameters 2N5484 Min 2N5485 Min 2N5486 Min Unit BVGSS Gate to Source Breakdown Voltage -25 -25 -25 V I Drain to Source Saturation Current 1 4 8 mA DSS V Gate to Source Cutoff Voltage -0.3 -0.5 -2 V GS(off) GFS Forward Transconductance 2500 3000 3500 S Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging 2N5484 2N5485 2N5486 Through-Hole TO-92 Bulk SMP5484 SMP5485 SMP5486 Surface Mount SOT23 Bulk 7 Tape and Reel: Max 3,000 Pieces Minimum 1,000 Pieces SMP5484TR SMP5485TR SMP5486TR 13 Tape and Reel: Max 9,000 Pieces SOT23 Tape and Reel Chip Orientated Tray 2N5484COT 2N5485COT 2N5486COT (COT Waffle Pack) COT 400/Waffle Pack Chip Face-up Tray 2N5484CFT 2N5485CFT 2N5486CFT (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35032.R00Product Technical OrOrdderer Folder Support NowNow InterFET 2N5484-5-6 Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -25 V I Continuous Forward Gate Current -25 mA FG P Continuous Device Power Dissipation 360 mW D P Power Derating 3.27 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 200 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) 2N5484 2N5485 2N5486 Parameters Conditions Min Max Min Max Min Max Unit Gate to Source V(BR)GSS VDS = 0V, IG = 1A -25 -25 -25 V Breakdown Voltage -1 -1 -1 Gate to Source VGS = -20V, VDS = 0V, TA = 25C nA IGSS Reverse Current V = -20V, V = 0V, T = 100C A GS DS A -0.2 -0.2 -0.2 Gate to Source V V = 15V, I = 10nA -0.3 -3 -0.5 -4 -2 -6 V GS(OFF) DS D Cutoff Voltage Drain to Source VDS = 15V, VGS = 0V I 1 5 4 10 8 20 mA DSS Saturation Current (Pulsed) Dynamic Characteristics ( TA = 25C, Unless otherwise specified) 2N5484 2N5485 2N5486 Parameters Conditions Min Max Min Max Min Max Unit Forward VDS = 15V, VGS = 0V, f = 100MHz 2500 G S FS Transconductance VDS = 15V, VGS = 0V, f = 400MHz 3000 3500 Output V = 15V, V = 0V, f = 100MHz 75 DS GS GOS S Conductance VDS = 15V, VGS = 0V, f = 400MHz 100 100 Ciss Input Capacitance VDS = 15V, VGS = 0V, f = 1MHz 5 5 5 pF Reverse Transfer C V = 15V, V = 0V, f = 1MHz 1 1 1 pF rss DS GS Capacitance Coss Output Capacitance VDS = 15V, VGS = 0V, f = 1MHz 2 2 2 pF 2N5484-5-6 2 of 4 InterFET Corporation Document Number: IF35032.R00 www.InterFET.com December, 2018