X-On Electronics has gained recognition as a prominent supplier of NSVF6003SB6T1G RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. NSVF6003SB6T1G RF Bipolar Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

NSVF6003SB6T1G ON Semiconductor

NSVF6003SB6T1G electronic component of ON Semiconductor
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See Product Specifications
Part No.NSVF6003SB6T1G
Manufacturer: ON Semiconductor
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors BIP NPN 0.15A 12V FT=7G
Datasheet: NSVF6003SB6T1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.595 ea
Line Total: USD 0.6 
Availability - 5263
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5263
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 0.595
10 : USD 0.5011
25 : USD 0.4962
100 : USD 0.4051
250 : USD 0.4009
500 : USD 0.3695
1000 : USD 0.3219
3000 : USD 0.2937
6000 : USD 0.2781
15000 : USD 0.2692
30000 : USD 0.2648

2667
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.644
10 : USD 0.5164
100 : USD 0.4048
500 : USD 0.3519
1000 : USD 0.299
3000 : USD 0.2794

   
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We are delighted to provide the NSVF6003SB6T1G from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NSVF6003SB6T1G and other electronic components in the RF Bipolar Transistors category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. NSVF6003SB6 RF Transistor 12 V, 150 mA, f = 7 GHz, NPN Single T This RF transistor is designed for low noise amplifier applications. CPH www.onsemi.com package is suitable for use under high temperature environment because it has superior heat radiation characteristics. This RF transistor is AEC-Q101 qualified and PPAP capable for automotive applications. 12 V, 150 mA Features f = 7 GHz typ. T High Gain (f = 7 GHz typ) T RF Transistor High Current (I = 150 mA) C Miniature and Thin 6 pin Package Large Collector Dissipation (800 mW) ELECTRICAL CONNECTION AEC-Q101 qualified and PPAP capable NPN Pb-Free, Halogen Free and RoHS compliance Typical Applications 1, 2, 5, 6 Low Noise Amplifier for FM Radio 1 : Collector Low Noise Amplifier for TV 2 : Collector 3 3 : Base 4 : Emitter 5 : Collector 6 : Collector 4 SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) Parameter Symbol Value Unit MARKING Collector to Base Voltage V 20 V CBO Collector to Emitter Voltage V 12 V 6 CEO 5 4 Emitter to Base Voltage V 2 V EBO 1 2 Collector Current I 150 mA C 3 CPH6 Collector Dissipation (Note 2) P 800 mW C Operating Junction and Tj, Tstg 55 to +150 C Storage Temperature Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage ORDERING INFORMATION the device. If any of these limits are exceeded, device functionality should not See detailed ordering and shipping be assumed, damage may occur and reliability may be affected. information on page 6 of this data sheet. 2 Note 2 : Surface mounted on ceramic substrate (250 mm 0.8 mm). Semiconductor Components Industries, LLC, 2017 1 Publication Order Number : May 2017 - Rev. 0 NSVF6003SB6/D GC LOT No.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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