TPV596 Advanced Semiconductor

TPV596 SILICON N-CHANNEL RF POWER MOSFET DESCRIPTION: PACKAGE STYLE 280 4L STUD The TPV596 is Designed for Common Source Push Pull RF Power Applications up to 400 MHz. FEATURES: P = 12 dB min. at 0.5 W/ 860 MHz G Common Emitter Omnigold Metallization System MAXIMUM RATINGS 0.7 A I C 24 V V CE T -65 C to +200 C J 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER T -65 C to +150 C STG O 8.75 W T = 25 C P C DISS NONE O CHARACTERISTICS T = 25 C C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV I = 20 mA 24 V C CEO BV I = 1.0 mA 45 V CBO C BV I = 20 mA R = 10 50 V CER C BE BV I = 0.25 mA 3.5 V EBO E I V = 28 V 0.45 mA CBO CB h I = 100 mA V = 5.0 V 15 120 --- C CE FE C V = 28 V f = 1.0 MHz 5.0 pF OB CB P 11.5 12 dB G V = 20 V I = 0.22 A f = 860 MHz CE E A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 1/1 Specifications are subject to change without notice.X-ON Electronics Largest Supplier of Electrical and Electronic Components Click to view similar products for RF Bipolar Transistors category: Click to view products by Advanced Semiconductor manufacturer: Other Similar products are found below : MAPRST0912-50 MCH4016-TL-H MMBT5551-G MRF10120 15GN01CA-TB-E PH1214-25M MAPRST0912-350 MMBTH10-TP BFP 640F H6327 BFP 720F H6327 BFP 740F H6327 BFR 360F H6765 MRF10031 NSVF4009SG4T1G BFP 182R E7764 BFP405H6740XTSA1 MRF10350 BFR360FH6765XTSA1 BFP410H6327XTSA1 BFP620FH7764XTSA1 BFP720ESDH6327XTSA1 BFP720FH6327XTSA1 BFR360L3E6765XTMA1 BFP420H6433XTMA1 BFP420H6740XTSA1 BFP420H6801XTSA1 MCH4015-TL-H BF888H6327XTSA1 MMBT2222A-G BFP196WH6327XTSA1 BFP405FH6327XTSA1 BFP640ESDH6327XTSA1 BFR193L3E6327XTMA1 BFS483H6327XTSA1 NSVF4020SG4T1G NSVF6003SB6T1G MRF10005 BFP420FH6327XTSA1 BFP740FESDH6327XTSA1 BFR181E6327HTSA1 BFR181WH6327XTSA1 BFR182E6327HTSA1 BFR193E6327HTSA1 BFP181E7764HTSA1 BFP183WH6327XTSA1 BFP720H6327XTSA1 BFR182WH6327XTSA1 BFU590GX MAPR-000912-500S00 BFR340FH6327XTSA1