NPN SILICON HIGH UPA814T FREQUENCY TRANSISTOR FEATURES OUTLINE DIMENSIONS (Units in mm) SMALL PACKAGE STYLE: PACKAGE OUTLINE S06 2 NE688 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: 2.1 0.1 NF = 1.5 dB TYP at 2 GHz 1.25 0.1 HIGH GAIN BANDWIDTH: fT = 9 GHz HIGH COLLECTOR CURRENT: 100 mA 1 6 0.65 DESCRIPTION 2.0 0.2 0.2 (All Leads) NEC s UPA814T is two NPN high frequency silicon epitaxial 5 2 1.3 transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily config- 3 4 ured for either dual transistor or cascode operation. The high fT, low voltage bias and small size make this device suited for various hand-held wireless applications. 0.9 0.1 1 ABSOLUTE MAXIMUM RATINGS (TA = 25C) 0.7 SYMBOLS PARAMETERS UNITS RATINGS +0.10 0.15 - 0.05 VCBO Collector to Base Voltage V 9 VCEO Collector to Emitter Voltage V 6 0 ~ 0.1 VEBO Emitter to Base Voltage V 2 IC Collector Current mA 100 PIN OUT PT Total Power Dissipation 1. Collector Transistor 1 1 Die mW 110 2. Base Transistor 2 2 Die mW 200 3. Collector Transistor 2 TJ Junction Temperature C 150 4. Emitter Transistor 2 TSTG Storage Temperature C -65 to +150 5. Emitter Transistor 1 6. Base Transistor 1 Note: 1.Operation in excess of any one of these parameters may Note: result in permanent damage. Pin 3 is identified with a circle on the bottom of the package. ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER UPA814T PACKAGE OUTLINE S06 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX ICBO Collector Cutoff Current at VCB = 5V, IE = 0 A 0.1 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 A 0.1 1 hFE Forward Current Gain at VCE = 1 V, IC = 3 mA 80 110 160 fT Gain Bandwidth at VCE = 3 V, IC = 20 mA, f = 2 GHz GHz 9.0 2 Cre Feedback Capacitance at VCB = 1 V, IE = 0, f = 1 MHz pF 0.75 0.85 2 S21E Insertion Power Gain at VCE = 3 V, IC =20 mA, f = 2 GHz dB 6.5 NF Noise Figure at VCE = 3 V, IC = 7 mA, f = 2 GHz dB 1.5 hFE1 = Smaller Value of Q1, or Q2 hFE1/hFE2 hFE Ratio: 0.85 hFE2 = Larger Value of Q1 or Q2 Notes: 1. Pulsed measurement, pulse width 350 s, duty cycle 2 %. 2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA814T-T1, 3K per reel. California Eastern Laboratories DISCONTINUED2 Elements in Total Per Element UPA814T TYPICAL PERFORMANCE CURVES (TA = 25C) TOTAL POWER DISSIPATION vs. COLLECTOR CURRENT vs. AMBIENT TEMPERATURE BASE TO EMITTER VOLTAGE 100 VCE = 1 V 50 Free Air 20 200 10 5 2 1 100 0.5 0.2 0.1 0.05 0.02 0.01 0 0.5 1 0 50 100 150 Ambient Temperature, TA (C) Base to Emitter Voltage, VBE (V) COLLECTOR CURRENT vs. DC CURRENT GAIN vs. COLLECTOR TO EMITTER VOLTAGE COLLECTOR CURRENT 200 30 VCE = 1 V 200 A 180 A 160 A 20 140 A 120 A 100 100 A 80 A 10 60 A 40 A lB = 20 A 0 01 2 3 4 5 6 0.1 0.2 0.5 12 5 10 20 50 100 Collector to Emitter Voltage, VCE (V) Collector Current, IC (mA) GAIN BANDWIDTH PRODUCT vs. INSERTION POWER GAIN vs. COLLECTOR CURRENT COLLECTOR CURRENT 10 10 VCE = 1 V VCE = 1 V f= 2 GHz f= 2 GHz 5 5 0 0 12 3 5710 12 3 5710 Collector Current, IC (mA) Collector Current, IC (mA) DISCONTINUED Gain Bandwidth Product, fT (GHz) Collector Current, IC (mA) Total Power Dissipation, PT (mW) 2 Insertion Power Gain, IS21eI (dB) DC Current Gain, hFE Collector Current, IC (mA)