DATA SHEET NPN SILICON RF TRANSISTOR JEITA Part No. NE85634 / 2SC3357 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD FEATURES Low noise and high gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. VCE = 10 V, IC = 40 mA, f = 1 GHz High power gain : MAG = 10 dB TYP. IC = 40 mA, f = 1 GHz 2 Large Ptot : Ptot = 1.2 W (Mounted on 16 cm 0.7 mm (t) ceramic substrate) Small package : 3-pin power minimold package ORDERING INFORMATION Part Number Quantity Supplying Form NE85634-A 25 pcs (Non reel) 12 mm wide embossed taping 2SC3357-A Collector face the perforation side of the tape NE85634-T1-A 1 kpcs/reel 2SC3357-T1-A Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 25 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3.0 V Collector Current IC 100 mA Note Total Power Dissipation Ptot 1.2 W Junction Temperature Tj 150 C Storage Temperature Tstg - 65 to +150 C 2 Note Mounted on 16 cm 0.7 mm (t) ceramic substrate Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Document No. PU10211EJ01V0DS (1st edition) The mark shows major revised points. (Previous No. P10357EJ4V1DS00) Date Published January 2003 CP(K) PHASE-OUTNE85634 / 2SC3357 THERMAL RESISTANCE Parameter Symbol Value Unit Note Junction to Ambient Resistance Rth (j-a) 62.5 C/W 2 Note Mounted on 16 cm 0.7 mm (t) ceramic substrate ELECTRICAL CHARACTERISTICS (TA = +25C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 10 V, IE = 0 mA 1.0 A Emitter Cut-off Current IEBO VEB = 1.0 V, IC = 0 mA 1.0 A Note 1 DC Current Gain hFE VCE = 10 V, IC = 20 mA 50 120 250 RF Characteristics Gain Bandwidth Product fT VCE = 10 V, IC = 20 mA 6.5 GHz 2 Insertion Power Gain S21e VCE = 10 V, IC = 20 mA, f = 1 GHz 9.0 dB Noise Figure (1) NF VCE = 10 V, IC = 7 mA, f = 1 GHz 1.1 dB Noise Figure (2) NF VCE = 10 V, IC = 40 mA, f = 1 GHz 1.8 3.0 dB Note 2 Cre CB E Reverse Transfer Capacitance V = 10 V, I = 0 mA, f = 1 MHz 0.65 1.0 pF Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge. hFE CLASSIFICATION Rank RH RF RE Marking RH RF RE hFE Value 50 to 100 80 to 160 125 to 250 2 Data Sheet PU10211EJ01V0DS PHASE-OUT