PH2729-25M Radar Pulsed Power Transistor Rev. V1 25W, 2.7-2.9 GHz, 100s Pulse, 10% Duty Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and output impedance matching Hermetic metal/ceramic package RoHS compliant Absolute Maximum Ratings at 25C Parameter Symbol Rating Units Collector-Emitter Voltage V 60 V CES Emitter-Base Voltage V 3.0 V EBO Collector Current (Peak) I 4.0 A C Power Dissipation +25C P 70 W TOT Storage Temperature T -65 to +200 C STG Junction Temperature T 200 C J Electrical Specifications: T = 25 5C (Room Ambient ) C Parameter Test Conditions Frequency Symbol Min Max Units Collector-Emitter Breakdown Voltage I = 10mA BV 60 - V C CES Collector-Emitter Leakage Current V = 40V I - 1.5 mA CE CES Thermal Resistance Vcc = 36V, Pin = 3.0W F = 2.7, 2.8, 2.9 GHz R - 1.25 C/W TH(JC) Output Power Vcc = 36V, Pin = 3.0W F = 2.7, 2.8, 2.9 GHz P 25 - W OUT Power Gain Vcc = 36V, Pin = 3.0W F = 2.7, 2.8, 2.9 GHz G 9.2 - dB P Collector Efficiency Vcc = 36V, Pin = 3.0W F = 2.7, 2.8, 2.9 GHz 45 - % C Input Return Loss Vcc = 36V, Pin = 3.0W F = 2.7, 2.8, 2.9 GHz RL - -6 dB Load Mismatch Tolerance Vcc = 36V, Pin = 3.0W F = 2.7, 2.8, 2.9 GHz VSWR-T - 3:1 - Load Mismatch Stability Vcc = 36V, Pin = 3.0W F = 2.7, 2.8, 2.9 GHz VSWR-S - 1.5:1 - 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: PH2729-25M Radar Pulsed Power Transistor Rev. V1 25W, 2.7-2.9 GHz, 100s Pulse, 10% Duty Typical RF Performance Freq. Pin Pout Gain Ic Eff RL VSWR-S VSWR-T (GHz) (W) (W) (dB) (A) (%) (dB) (1.5:1) (3:1) 2.7 3.0 29.9 9.98 1.45 57.2 -13.9 S P 2.8 3.0 29.1 9.87 1.37 59.2 -19.6 S P 2.9 3.0 27.1 9.56 1.26 59.6 -19.3 S P Gain vs. Frequency Collector Efficiency vs. Frequency 11.0 65 10.4 60 9.8 55 9.2 50 8.6 45 2.70 2.75 2.80 2.85 2.90 2.70 2.75 2.80 2.85 2.90 Freq (GHz) Freq (GHz) RF Test Fixture Impedance F (GHz) Z () Z () IF OF 2.7 38.0 - j14.4 17.1 - j8.7 2.8 35.0 - j16.3 15.0 - j8.7 2.9 33.0 - j17.8 13.3 - j8.3 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: