BFP405H6740XTSA1 Infineon

BFP405 Surface mount wideband silicon NPN RF bipolar transistor Product description The BFP405 is a low noise device based on a grounded emitter (SIEGET ) that is part of Infineons established fourth generation RF bipolar transistor family. Its transition frequency f of 25 GHz and low current characteristics make the device suitable for T oscillators up to 12 GHz. It remains cost competitive without compromising on ease of use. Feature list Minimum noise figure NF = 1.25 dB at 1.8 GHz, 2 V, 2 mA min High gain G = 23 dB at 1.8 GHz, 2 V, 5 mA ms OIP = 15 dBm at 1.8 GHz, 2 V, 5 mA 3 Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications Radio-frequency oscillators Broadband low noise amplifiers (LNAs) for CATV, DVB-T, DAB/DMB and FM/AM radio LNAs for sub-1 GHz ISM band applications Device information Table 1 Part information Product name / Ordering code Package Pin configuration Marking Pieces / Reel BFP405 / BFP405H6327XTSA1 SOT343 1 = B 2 = E 3 = C 4 = E ALs 3000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet Please read the Important Notice and Warnings at the end of this document Revision 2.0 www.infineon.com 2019-01-25BFP405 Surface mount wideband silicon NPN RF bipolar transistor Table of contents Table of contents Product description 1 Feature list . 1 Product validation . 1 Potential applications 1 Device information . 1 Table of contents . 2 1 Absolute maximum ratings 3 2 Thermal characteristics . 4 3 Electrical characteristics 6 3.1 DC characteristics . 6 3.2 General AC characteristics 6 3.3 Frequency dependent AC characteristics .7 3.4 Characteristic AC diagrams . 8 4 Package information SOT343 .13 Revision history . 14 Disclaimer 15 Datasheet 2 Revision 2.0 2019-01-25