BFP720FESD SiGe:C NPN RF bipolar transistor Product description The BFP720FESD is a wideband RF heterojunction bipolar transistor (HBT) with an integrated ESD protection. Feature list Unique combination of high end RF performance and robustness: 21 dBm maximum RF input power, 2 kV HBM ESD hardness High transition frequency f = 45 GHz to enable low noise figure at high frequencies: T NF = 0.8 dB at 5.5 GHz, 3 V, 5 mA min High gain G = 22 dB at 5.5 GHz, 3 V, 15 mA ms OIP = 21 dBm at 5.5 GHz, 3 V, 15 mA 3 Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications Wireless communications: WLAN, WiMax and UWB Satellite communication systems: GNSS navigation systems (GPS, GLONASS, BeiDou, Galileo), satellite radio (SDARs, DAB) and C-band LNB Multimedia applications such as portable TV, CATV and FM radio ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications Device information Table 1 Part information Product name / Ordering code Package Pin configuration Marking Pieces / Reel BFP720FESD / BFP720FESDH6327XTSA1 TSFP-4-1 1 = B 2 = E 3 = C 4 = E T3s 3000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet Please read the Important Notice and Warnings at the end of this document v2.0 www.infineon.com 2018-09-26BFP720FESD SiGe:C NPN RF bipolar transistor Table of contents Table of contents Product description 1 Feature list . 1 Product validation . 1 Potential applications 1 Device information . 1 Table of contents . 2 1 Absolute maximum ratings 3 2 Thermal characteristics . 4 3 Electrical characteristics 5 3.1 DC characteristics . 5 3.2 General AC characteristics 5 3.3 Frequency dependent AC characteristics .6 3.4 Characteristic DC diagrams 10 3.5 Characteristic AC diagrams 13 4 Package information TSFP-4-1 . 19 Revision history . 20 Disclaimer 21 Datasheet 2 v2.0 2018-09-26