X-On Electronics has gained recognition as a prominent supplier of NSVF5488SKT3G RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. NSVF5488SKT3G RF Bipolar Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

NSVF5488SKT3G ON Semiconductor

NSVF5488SKT3G electronic component of ON Semiconductor
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Part No.NSVF5488SKT3G
Manufacturer: ON Semiconductor
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors BIP NPN 70MA 10V F
Datasheet: NSVF5488SKT3G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5049 ea
Line Total: USD 0.5 
Availability - 6791
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6791
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5049
10 : USD 0.4036
100 : USD 0.3093
500 : USD 0.2691
1000 : USD 0.2139
2500 : USD 0.1966
8000 : USD 0.1794
24000 : USD 0.1771
48000 : USD 0.1737

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Operating Frequency
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Qualification
Brand
Hts Code
Maximum Dc Collector Current
Product Type
Factory Pack Quantity :
Subcategory
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We are delighted to provide the NSVF5488SKT3G from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NSVF5488SKT3G and other electronic components in the RF Bipolar Transistors category and beyond.

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LOT No. LOT No. NSVF5488SK RF Transistor for Low Noise Amplifier 10 V, 70 mA, f = 7 GHz typ. RF Transistor T This RF transistor is designed for RF amplifier applications. SSFP www.onsemi.com package is contribute to down size of application because it is small surface mount package. This RF transistor is AECQ101 qualified and PPAP capable for automotive applications. 3 1 Features 2 Lownoise: NF = 1.0 dB typ. (f = 1 GHz) SOT623 / SSFP 2 High Gain: S21e = 12 dB typ. (f = 1 GHz) CASE 631AC High Cutoff Frequency: f = 7 GHz typ. T SSFP Package is Pincompatible with SOT623 ELECTRICAL CONNECTION NPN AECQ101 Qualified and PPAP Capable 3 These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 1 Typical Applications 1 : Base RF Amplifier for RKE 2 : Emitter 2 3 : Collector RF Amplifier for ADAS RF Amplifier for Remote Engine Starter RF Amplifier for UHF Application MARKING DIAGRAM LN LN = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: February, 2019 Rev. 0 NSVF5488SK/DNSVF5488SK SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS at Ta = 25C Parameter Symbol Value Unit Collector to Base Voltage V 20 V CBO Collector to Emitter Voltage V 10 V CEO Emitter to Base Voltage V 2 V EBO Collector Current I 70 mA C Collector Dissipation P mW 100 C Operating Junction and Storage Temperature Tj, Tstg 55 to +150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS at Ta = 25C Value Min Typ Max Parameter Symbol Conditions Unit Collector Cutoff Current I V = 10 V, I = 0 A 1.0 A CBO CB E Emitter Cutoff Current I V = 1 V, I = 0 A 10 A EBO EB C DC Current Gain h V = 5 V, I = 20 mA 90 200 FE CE C GainBandwidth Product f V = 5 V, I = 20 mA 5 7 GHz T CE C Output Capacitance Cob V = 10 V, f = 1 MHz 0.7 1.2 pF CB Reverse Transfer Capacitance Cre 0.45 pF 2 Forward Transfer Gain S21e 1 9 12 dB V = 5 V, I = 20 mA, f = 1 GHz CE C 2 S21e 2 V = 2 V, I = 3 mA, f = 1 GHz 8.5 dB CE C Noise Figure NF V = 5 V, I = 7 mA, f = 1 GHz 1.0 1.8 dB CE C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pay attention to handling since it is liable to be affected by static electricity due to the high frequency process adopted. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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