X-On Electronics has gained recognition as a prominent supplier of BFP 182R E7764 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFP 182R E7764 RF Bipolar Transistors are a product manufactured by Infineon. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFP 182R E7764 Infineon

BFP 182R E7764 electronic component of Infineon
BFP 182R E7764 Infineon
BFP 182R E7764 RF Bipolar Transistors
BFP 182R E7764  Semiconductors

Images are for reference only
See Product Specifications
Part No. BFP 182R E7764
Manufacturer: Infineon
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors NPN Silicon RF TRANSISTOR
Datasheet: BFP 182R E7764 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 9000
Multiples : 9000
9000 : USD 0.1338
27000 : USD 0.1306
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Transistor Type
Technology
Transistor Polarity
Operating Frequency
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Collector- Base Voltage Vcbo
Dc Current Gain Hfe Max
Height
Length
Type
Width
Brand
Gain Bandwidth Product Ft
Maximum Dc Collector Current
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BFP 182R E7764 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFP 182R E7764 and other electronic components in the RF Bipolar Transistors category and beyond.

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BFP182R Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at 3 collector currents from 1 mA to 20 mA 2 4 f = 8 GHz, NF = 0.9 dB at 900 MHz 1 T min Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution Type Marking Pin Configuration Package BFP182R RGs 1=E 2=C 3=E 4 = B - - SOT143R Maximum Ratings at T = 25 C, unless otherwise specified A Parameter Symbol Value Unit 12 V Collector-emitter voltage V CEO 20 Collector-emitter voltage V CES 20 Collector-base voltage V CBO 2 Emitter-base voltage V EBO 35 mA Collector current I C 4 Base current I B 1) 250 mW Total power dissipation P tot T 69 C S 150 C Junction temperature T J Storage temperature T -55 ... 150 Stg Thermal Resistance Parameter Symbol Value Unit 2) K/W Junction - soldering point R 325 thJS 1 T is measured on the collector lead at the soldering point to the pcb S 2 For the definition of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJS 1 2014-04-07BFP182R Electrical Characteristics at T = 25 C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 12 - - V Collector-emitter breakdown voltage V (BR)CEO I = 1 mA, I = 0 C B - - 100 A Collector-emitter cutoff current I CES V = 20 V, V = 0 CE BE - - 100 nA Collector-base cutoff current I CBO V = 10 V, I = 0 CB E - - 1 A Emitter-base cutoff current I EBO V = 1 V, I = 0 EB C 70 100 140 - DC current gain h FE I = 10 mA, V = 8 V, pulse measured C CE 2 2014-04-07

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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