NSVF4017SG4 RF Transistor for Low Noise Amplifier 12 V, 100 mA, f = 10 GHz typ. T This RF transistor is designed for low noise amplifier applications. www.onsemi.com MCPH package is suitable for use under high temperature environment because it has superior heat radiation characteristics. This RF transistor is AECQ101 qualified and PPAP capable for automotive applications. Features 1 Lownoise Use: NF = 1.2 dB typ. (f = 1 GHz) SC82FL MCPH4 High Cutoff Frequency: f = 10 GHz typ. (V = 5 V) T CE CASE 419AR 2 High Gain: S21e = 17 dB typ. (f = 1 GHz) MCPH4 Package is Pincompatible with SC82FL AECQ101 Qualified and PPAP Capable ELECTRICAL CONNECTION NPN These Devices are PbFree, Halogen Free/BFR Free and are RoHS 2 Compliant Typical Applications 1: Emitter Low Noise Amplifier for Digital Radio 2: Collector 4 Low Noise Amplifier for TV 3: Emitter 4: Base Low Noise Amplifier for FM Radio RF Amplifier for UHF Application 1, 3 MAXIMUM RATINGS at T = 25C A MARKING DIAGRAM Rating Symbol Value Unit Collector to Base Voltage V 20 V CBO Collector to Emitter Voltage V 12 V CEO GQ Emitter to Base Voltage V 2 V EBO Collector Current I 100 mA C GQ = Specific Device Code Collector Dissipation P 450 mW C XX = Lot Number Operating Junction and Storage Temper- T , T 55 to C J stg ature +150 Stresses exceeding those listed in the Maximum Ratings table may damage the ORDERING INFORMATION device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Device Package Shipping NSVF4015SG4T1G SC82FL 3000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: March, 2018 Rev. 0 NSFV4017SG4/D LOT No. LOT No.NSVF4017SG4 Table 1. ELECTRICAL CHARACTERISTICS at T = 25C (Note 1) A Value Min Typ Max Parameter Symbol Conditions Unit Collector Cutoff Current I V = 5 V, I = 0 A 1.0 A CBO CB E Emitter Cutoff Current I 1.0 V = 1 V, I = 0 A A EBO EB C DC Current Gain h V = 5 V, I = 50 mA 60 150 FE CE C GainBandwidth Product f V = 5 V, I = 30 mA 8 10 GHz T CE C 2 Forward Transfer Gain S21e 14 17 dB V = 5 V, I = 30 mA, f = 1 GHz CE C Noise Figure NF V = 5 V, I = 10 mA, f = 1 GHz 1.2 1.8 dB CE C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pay attention to handling since it is liable to be affected by static electricity due to the high frequency process adopted. www.onsemi.com 2