RN1101MFV to RN1106MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1101MFV, RN1102MFV, RN1103MFV RN1104MFV, RN1105MFV, RN1106MFV Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications Ultra-small package, suited to very high density mounting Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering assembly cost. A wide range of resistor values is available for use in various circuits. Complementary to the RN2101MFV to RN2106MFV Equivalent Circuit and Bias Resistor Values Type No. R1 (k) R2 (k) RN1101MFV 4.7 4.7 RN1102MFV 10 10 RN1103MFV 22 22 1.BASE 2.EMITTER RN1104MFV 47 47 VESM 3.COLLECTOR RN1105MFV 2.2 47 JEDEC RN1106MFV 4.7 47 JEITA TOSHIBA 1-1Q1S Absolute Maximum Ratings (Ta = 25C) Weight: 1.5 mg (typ.) Characteristic Symbol Rating Unit Collector-base voltage V 50 V CBO RN1101MFV to 1106MFV Collector-emitter voltage V 50 V CEO RN1101MFV to 1104MFV 10 Emitter-base voltage V V EBO RN1105MFV, 1106MFV 5 Collector current I 100 mA C Collector power dissipation P (Note 1) 150 mW C RN1101MFV to 1106MFV Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board (25.4 mm 25.4 mm 1.6 mm) 0.5 Land Pattern Dimensions Unit: mm (for reference only) 0.45 1.15 0.4 0.45 Start of commercial production 2005-02 0.4 0.4 2016-2018 2018-12-21 1 Toshiba Electronic Devices & Storage Corporation RN1101MFV to RN1106MFV Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit I V = 50 V, I = 0 A 100 CBO CB E Collector cutoff current RN1101MFV to RN1106MFV nA I V = 50 V, I = 0 A 500 CEO CE B RN1101MFV 0.82 1.52 RN1102MFV 0.38 0.71 V = 10 V, I = 0 A EB C RN1103MFV 0.17 0.33 Emitter cutoff current I mA EBO RN1104MFV 0.082 0.15 RN1105MFV 0.078 0.145 V = 5 V, I = 0 A EB C RN1106MFV 0.074 0.138 RN1101MFV 30 RN1102MFV 50 RN1103MFV 70 DC current gain h V = 5 V, I = 10 mA FE CE C RN1104MFV 80 RN1105MFV 80 RN1106MFV 80 Collector-emitter RN1101MFV to RN1106MFV V I = 5 mA, I = 0.5 mA 0.1 0.3 CE (sat) C B V saturation voltage RN1101MFV 1.1 2.0 RN1102MFV 1.2 2.4 RN1103MFV 1.3 3.0 Input voltage (ON) V V = 0.2 V, I = 5 mA V I (ON) CE C RN1104MFV 1.5 5.0 RN1105MFV 0.6 1.1 RN1106MFV 0.7 1.3 RN1101MFV to RN1104MFV 1.0 1.5 Input voltage (OFF) V V = 5 V, I = 0.1 mA V I (OFF) CE C 0.5 0.8 RN1105MFV, RN1106MFV V = 10 V, I = 0 A, Collector output CB E RN1101MFV to RN1106MFV C 0.7 pF ob capacitance f = 1 MH z RN1101MFV 3.29 4.7 6.11 7 10 13 RN1102MFV RN1103MFV 15.4 22 28.6 Input resistor R1 k 32.9 47 61.1 RN1104MFV RN1105MFV 1.54 2.2 2.86 3.29 4.7 6.11 RN1106MFV RN1101MFV to RN1104MFV 0.8 1.0 1.2 Resistor ratio R1/R2 RN1105MFV 0.0376 0.0468 0.0562 RN1106MFV 0.08 0.1 0.12 2016-2018 2018-12-21 2 Toshiba Electronic Devices & Storage Corporation