X-On Electronics has gained recognition as a prominent supplier of MT3S16U(TE85L,F) RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. MT3S16U(TE85L,F) RF Bipolar Transistors are a product manufactured by Toshiba. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

MT3S16U(TE85L,F) Toshiba

MT3S16U(TE85L,F) electronic component of Toshiba
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Part No.MT3S16U(TE85L,F)
Manufacturer: Toshiba
Category: RF Bipolar Transistors
Description: Transistors RF Bipolar RF 50mW 5.5dB 10V USM 60mA 2GHz
Datasheet: MT3S16U(TE85L,F) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.2277
10 : USD 0.1856
100 : USD 0.1263
1000 : USD 0.0917
3000 : USD 0.0798
9000 : USD 0.0745
24000 : USD 0.0712
45000 : USD 0.0648
99000 : USD 0.0626
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Transistor Type
Technology
Transistor Polarity
Operating Frequency
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Factory Pack Quantity :
Collector- Base Voltage Vcbo
Dc Current Gain Hfe Max
Operating Temperature Range
Cnhts
Hts Code
Product Type
Subcategory
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We are delighted to provide the MT3S16U(TE85L,F) from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT3S16U(TE85L,F) and other electronic components in the RF Bipolar Transistors category and beyond.

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MT3S16U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S16U Unit: mm UHF Band Oscillator and Amplifier Applications fT is high and current dependability is excellent. The characteristic of Reverse transfer capacitance (C ) is flat. re : NF = 2.4dB (typ.) ( 2V, 5mA, 1 GHz) 2 : S = 4.5dB (typ.) ( 2V, 10mA, 1 GHz) 21e Marking 3 Type Name T 4 1.Base 2.Emitter 3.Collector 1 2 USM JEDEC JEITA SC-70 Absolute Maximum Ratings (Ta = 25C) TOSHIBA 2-2E1A Characteristics Symbol Unit Rating Weight : 6 mg (Typ.) Collector-base voltage V 10 V CBO Collector-emitter voltage V 5 V CEO Emitter-base voltage V 2 V EBO Collector current I 60 mA C Base current I 10 mA B P 100 mW C Collector power dissipation P (Note.1) 180 mW C Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note.1: The device is mounted on a FR4 board (20mm X 25mm X 1.55 mm (t)) Start of commercial production 2002-09 1 2014-03-01 MT3S16U Microwave Characteristics (Ta = 25C) Characteristics Symbol Condition Min Typ. MaxUnit Transition frequency f V = 3 V, I = 10 mA 2 4 GHz T CE C 2 S (1) V = 2 V, I = 10 mA, f = 1 GHz 4.5 21e CE C Insertion gain dB 2 S (2) V = 3 V, I = 30 mA, f = 1 GHz 3 5.5 21e CE C NF V = 2 V, I = 5 mA, f = 1GHz Noise figure CE C 2.4 3.2 dB Electrical Characteristics (Ta = 25C) Characteristics Symbol Condition Min Typ. MaxUnit I V = 5 V, I = 0 0.1 A Collector cut-off current CBO CB E I V = 1 V, I = 0 Emitter cut-off current 1 A EBO EB C h V = 1 V, I = 5 mA DC current gain 80 140 FE CE C C V = 1 V, I = 0, f = 1 MHz (Note.2) Reverse transfer capacitance re CB E 2.4 3 pF Note.2: C is measured with a three-terminal method using a capacitance bridge. re Caution This device is sensitive to electrostatic discharge. Ensure that tools and equipment are sufficiently grounded before handling. When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2014-03-01

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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