BFG410W,135 NXP

DISCRETE SEMICONDUCTORS DATA SHEET BFG410W NPN 22 GHz wideband transistor Product specification 1998 Mar 11 Supersedes data of 1997 Oct 29NXP Semiconductors Product specification NPN 22 GHz wideband transistor BFG410W FEATURES PINNING Very high power gain PIN DESCRIPTION Low noise figure 1emitter High transition frequency 2 base Emitter is thermal lead 3emitter Low feedback capacitance. 4 collector APPLICATIONS RF front end Wideband applications, e.g. analog and digital cellular 3 4 handbook, halfpage telephones, cordless telephones (PHS, DECT, etc.) Radar detectors Pagers 21 Satellite television tuners (SATV) Top view MSB842 High frequency oscillators. DESCRIPTION Marking code: P4. NPN double polysilicon wideband transistor with buried Fig.1 Simplified outline SOT343R. layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter 10 V CBO V collector-emitter voltage open base 4.5 V CEO I collector current (DC) 10 12 mA C P total power dissipation T 110 C 54 mW tot s h DC current gain I =10mA V =2V T =25 C 5080120 FE C CE j C feedback capacitance I =0 V =2V f= 1MHz 45 fF re C CB f transition frequency I =10mA V =2V f= 2GHz T =25 C 22 GHz T C CE amb G maximum power gain I =10mA V =2V f= 2GHz T =25 C 21 dB max C CE amb F noise figure I =1mA V = 2 V f = 2 GHz = 1.2 dB C CE S opt CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. 1998 Mar 11 2