X-On Electronics has gained recognition as a prominent supplier of BFG540W/X RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFG540W/X RF Bipolar Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFG540W/X NXP

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See Product Specifications

Part No.	BFG540W/X
Manufacturer:	NXP
Category:	RF Bipolar Transistors
Description:	TRANSISTOR, NPN, 9GHZ, SOT-343
Datasheet:
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

100: USD 0.3286 ea
Line Total: USD 32.86

Availability - 0

MOQ: 100 Multiples: 1
Pack Size: 1

BFG540W/X More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 27 Dec to Thu. 02 Jan MOQ : 100 Multiples : 1	100 : USD 0.3286 500 : USD 0.2881 1000 : USD 0.2548 5000 : USD 0.2314

Specifications

Manufacturer NXP NXP
Product Category RF Bipolar Transistors RF Bipolar Transistors
Transistor Polarity NPN NPN
Brand NXP NXP
Collector Emitter Voltage Vbrceo 15 V 15 V
Transition Frequency Ft 9Ghz 9Ghz
Power Dissipation Pd 500 mW 500 mW
Dc Collector Current 120 mA 120 mA
Dc Current Gain Hfe 120hFE 120hFE
Rf Transistor Case SOT - 343 SOT - 343
No. Of Pins 4Pins 4Pins
Operating Temperature Max 150 C 150 C
Msl MSL 1 - Unlimited MSL 1 - Unlimited
Svhc No SVHC (27 - Jun - 2018) No SVHC (27 - Jun - 2018)
Continuous Collector Current Ic 120 mA 120 mA
Continuous Collector Current Ic Max 120 mA 120 mA
Current Gain Hfe Max 250 250
Current Ic Hfe 40 mA 40 mA
Dc Current Gain Hfe Max 250 250
Dc Current Gain Hfe Min 100 100
Gain Bandwidth Ft Typ 9Ghz 9Ghz
Hfe Min 100 100
Hfe Typ 120 120
Junction Temperature Tj Max 175 C 175 C
Noise Figure Typ 1.9Db 1.9Db
Operating Temperature Min - 65 C - 65 C
Operating Temperature Range - 65 C To + 150 C - 65 C To + 150 C
Pin Configuration C(1),B(2),E(3 + 4) C(1),B(2),E(3 + 4)
Power @ 1Db Gain Compression P1db 21 dBm 21 dBm
Termination Type Surface Mount Device Surface Mount Device
Test Frequency 900Mhz 900Mhz
Transistor Case Style SOT - 343 SOT - 343
Voltage Vcbo 20 V 20 V

We are delighted to provide the BFG540W/X from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFG540W/X and other electronic components in the RF Bipolar Transistors category and beyond.

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HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

FR9 may also be referenced as

Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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