X-On Electronics has gained recognition as a prominent supplier of BFR193WH6327XTSA1 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFR193WH6327XTSA1 RF Bipolar Transistors are a product manufactured by Infineon. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFR193WH6327XTSA1 Infineon

BFR193WH6327XTSA1 electronic component of Infineon
BFR193WH6327XTSA1 Infineon
BFR193WH6327XTSA1 RF Bipolar Transistors
BFR193WH6327XTSA1  Semiconductors

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See Product Specifications
Part No. BFR193WH6327XTSA1
Manufacturer: Infineon
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors RF BIP TRANSISTOR
Datasheet: BFR193WH6327XTSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2012 ea
Line Total: USD 0.2 
Availability - 36411
Ship by Fri. 04 Apr to Tue. 08 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
11640
Ship by Tue. 08 Apr to Mon. 14 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.0991
6000 : USD 0.092
9000 : USD 0.0867
24000 : USD 0.0863

728
Ship by Tue. 08 Apr to Mon. 14 Apr
MOQ : 490
Multiples : 1
490 : USD 0.1326
515 : USD 0.1261
543 : USD 0.1196
575 : USD 0.1131
610 : USD 0.1066
649 : USD 0.1001

36411
Ship by Fri. 04 Apr to Tue. 08 Apr
MOQ : 1
Multiples : 1
1 : USD 0.2012
10 : USD 0.1288
100 : USD 0.1008
500 : USD 0.0891
1000 : USD 0.0847
3000 : USD 0.0803
6000 : USD 0.0792
9000 : USD 0.077
24000 : USD 0.0759

1914
Ship by Fri. 04 Apr to Tue. 08 Apr
MOQ : 1
Multiples : 1
1 : USD 0.532
5 : USD 0.434
50 : USD 0.2506
100 : USD 0.2114
119 : USD 0.1512

1173
Ship by Tue. 08 Apr to Mon. 14 Apr
MOQ : 566
Multiples : 1
566 : USD 0.1148

14550
Ship by Tue. 08 Apr to Mon. 14 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.1066
6000 : USD 0.099
9000 : USD 0.0933
24000 : USD 0.0927

11640
Ship by Tue. 08 Apr to Mon. 14 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.0991
6000 : USD 0.092
9000 : USD 0.0867
24000 : USD 0.0863

728
Ship by Tue. 08 Apr to Mon. 14 Apr
MOQ : 543
Multiples : 1
543 : USD 0.1196
575 : USD 0.1131
610 : USD 0.1066
649 : USD 0.1001

   
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We are delighted to provide the BFR193WH6327XTSA1 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFR193WH6327XTSA1 and other electronic components in the RF Bipolar Transistors category and beyond.

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BFR193W Low Noise Silicon Bipolar RF Transistor For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers 3 2 1 f = 8 GHz, NF = 1 dB at 900 MHz T min Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution Type Marking Pin Configuration Package BFR193W RCs SOT323 1 = B 2 = E 3 = C Maximum Ratings at T = 25 C, unless otherwise specified A Parameter Symbol Value Unit 12 V Collector-emitter voltage V CEO 20 Collector-emitter voltage V CES 20 Collector-base voltage V CBO 2 Emitter-base voltage V EBO 80 mA Collector current I C 10 Base current I B 1) 580 mW Total power dissipation P tot T 63C S 150 C Junction temperature T J Storage temperature T -55 ... 150 Stg Thermal Resistance Parameter Symbol Value Unit 2) K/W Junction - soldering point R 150 thJS 1 T is measured on the collector lead at the soldering point to the pcb S 2 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJS 2014-04-07 1BFR193W Electrical Characteristics at T = 25 C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 12 - - V Collector-emitter breakdown voltage V (BR)CEO I = 1 mA, I = 0 C B - - 100 A Collector-emitter cutoff current I CES V = 20 V, V = 0 CE BE - - 100 nA Collector-base cutoff current I CBO V = 10 V, I = 0 CB E - - 1 A Emitter-base cutoff current I EBO V = 1 V, I = 0 EB C 70 100 140 - DC current gain h FE I = 30 mA, V = 8 V, pulse measured C CE 2014-04-07 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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