DocumentNumber:MRF24300N FreescaleSemiconductor Rev. 0, 5/2016 TechnicalData RFPowerLDMOSTransistor MRF24300N N--ChannelEnhancement--ModeLateralMOSFET This 300W CW transistoris designedfor industrial, scientific, medical(ISM) applications at 2450 MHz. This device is suitable for use inCW, pulseand linear applications. This high gain, high efficiency device is targeted to replace industrialmagnetrons andwillprovidelongerlifeandeaseof use. 2450MHz,300WCW,32V TypicalPerformance: In24002500MHz referencecircuit,V =32Vdc RFPOWERLDMOSTRANSISTOR DD Frequency P G P in ps D out (MHz) SignalType (W) (dB) (%) (W) 2450 CW 15.9 13.1 60.5 320 LoadMismatch/Ruggedness Frequency P Test in SignalType VSWR (MHz) (W) Voltage Result (1) OM--780--2L 2450 CW >5:1 15.0 32 NoDevice PLASTIC atallPhase (2dB Degradation Angles Overdrive) 1. Measuredin2450MHz referencecircuit. Features Characterizedwithseries equivalent large--signalimpedanceparameters Internally matchedforeaseof use Gate21 Drain Qualifiedforoperationat 32Vdc IntegratedESD protection Low thermalresistance TargetApplications (TopView) Industrialheating: Sterilization Note: Exposed backside of the package is Pasteurization thesourceterminalforthetransistor. Industrialdrying Figure1.PinConnections Moisture--levelingprocess Curing Welding Heat sealing Microwaveablation Renaldenervation Diathermy FreescaleSemiconductor, Inc., 2016. All rights reserved. MRF24300N RFDeviceData FreescaleSemiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V 0.5,+65 Vdc DSS Gate--SourceVoltage V 6.0,+10 Vdc GS OperatingVoltage V 32,+0 Vdc DD StorageTemperatureRange T 65to+150 C stg CaseOperatingTemperatureRange T 40to+150 C C (1,2) OperatingJunctionTemperatureRange T 40to+225 C J TotalDeviceDissipation T =25 C P 833 W C D Derateabove25 C 4.17 W/ C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R 0.24 C/W JC CaseTemperature89C,300WCW,32Vdc,I =100mA,2450MHz DQ Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2,passes 2500V MachineModel(perEIA/JESD22--A115) B,passes250V ChargeDeviceModel(perJESD22--C101) IV,passes 2000V Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =32Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 1.6 2.0 2.4 Vdc GS(th) (V =10Vdc,I =303 Adc) DS D GateQuiescentVoltage V 2.5 Vdc GS(Q) (V =32Vdc,I =100mAdc,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.15 0.17 Vdc DS(on) (V =10Vdc,I =3.7Adc) GS D 1. Continuous useatmaximumtemperaturewillaffectMTTF. 2. MTTFcalculatoravailableat