QPA1017D 5.77 GHz 50 Watt GaN Power Amplifier Product Overview Qorvo s QPA1017D is a high power MMIC amplifier fabricated on Qorvo s production 0.15 um GaN on SiC process (QGaN15). The QPA1017D operates from 5.7 7.0 GHz, provides 50 W of saturated output power with 21 dB of large signal gain and greater than 40% poweradded efficiency. For satellite communications applications, QPA1017D provides 25 W linear power with 25 dBc third order intermodulation distortion products. To simplify system integration, QPA1017D is fully matched to 50 ohms. Input port is DC grounded for improved ESD performance, output port is AC coupled with integrated DC Key Features blocking capacitor. Frequency Range: 5.7 7 GHz Lead-free and RoHS compliant PSAT (PIN = 26 dBm): > 47 dBm PAE (P = 26 dBm): > 40 % IN Power Gain (P = 26 dBm): > 21 dB IN IM3 (POUT/Tone = 41 dBm): -25 dBc Small Signal Gain: > 28 dB Bias: VD = +24 V, IDQ = 1.5 A, VG = -2.5 V typ. Die Dimensions: 4.79 x 6.45 x 0.10 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram Applications C-Band Radar Satellite Communications Ordering Information Part No. Description 5.77 GHz 50 Watt GaN Amplifier QPA1017D (10 pcs.) QPA1017DS2 Samples (2 pcs. pack) QPA1017DEVB Evaluation Board for QPA1017D Data Sheet Rev. A, June 2019 Subject to change without notice 1 of 29 www.qorvo.com QPA1017D 5.7 7 GHz 50 Watt GaN Power Amplifier Recommended Operating Conditions Absolute Maximum Ratings Parameter Min Typ. Max Units Parameter Value/Range Drain Voltage (V ) 29.5 V Drain Voltage (V ) +24 +28 V D D Gate Voltage Range (V ) -6 V to 0 V G Drain Current, Quiescent (I ) 1.5 A DQ Drain Current (I ) 10 A D Drain Current, RF (I ) See chart page 4, 6 A D Drive Gate Current (IG) See plot page 20 Gate Voltage Typ. Range (V ) 2 to -2.9 V G Pulsed, 180 W Gate Current, RF (IG Drive) See chart page 4, 6 mA Power Dissipation (P ), 85 C DISS CW, 100 W Operating Temp. Range (TBASE) 40 +85 C Input Power (PIN), Pulsed and CW, Electrical specifications are measured at specified test 50 , V = 24 V, I = 1.5 A, T = 32 dBm* D DQ BASE conditions. Specifications are not guaranteed over all 85 C, recommended operating conditions. Input Power (P ), Pulsed and CW, IN 3:1 VSWR, VD = 24 V, IDQ = 1.5 A , 32 dBm* T = 85 C BASE Mounting Temperature (30 seconds) 320 C Storage Temperature -55 to +150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. * Robustness guaranteed over 5.7-7.0 GHz. Out of band operation not recommended Electrical Specifications (1) (2) Parameter Conditions Min Typ. Max Units Operational Frequency Range 5.7 7 GHz Output Power at Saturation, P P = +26 dBm, Pulsed 47 dBm SAT IN Large Signal Gain P = +26 dBm, Pulsed 22 dB IN Small Signal Gain, S21 CW 28 dB Input Return Loss, IRL CW 8 dB Output Return Loss, ORL CW 5 dB POUT/Tone = 41 dBm Freq. = 5.7, 6.4, 7 GHz RD 3 Intermodulation Products, IM3 -25 dBc f = 20 MHz, CW POUT/Tone = 41 dBm Freq. = 35 GHz TH 5 Intermodulation Products, IM5 -35 dBc f = 20 MHz, CW T = 40 C to +85 C P = +26 dBm, DIFF IN PSAT Temperature Coefficient -0.007 dBm/C Pulsed S21 Temperature Coefficient TDIFF = 40 C to +85 C, CW -0.065 dB/C Notes: 1. Test conditions unless otherwise noted: Pulsed VD = +24 V, IDQ = 1.5 A, VG = -2.5V +/- typical, DC = 20%, PW = 150 us, TBASE=+25 C, Z0=50 2. T is back side of 40 mil CuMo carrier plate with AuSn solder BASE Data Sheet Rev. A, June 2019 Subject to change without notice 2 of 29 www.qorvo.com