QPA1019 4.57.0 GHz 10 W GaN Power Amplifier Product Overview Qorvos QPA1019 is a packaged high-power, C-band amplifier fabricated on Qorvos production 0.15 um GaN on SiC process (QGaN15). Covering 4.57.0 GHz, the QPA1019 provides greater than 10 W of saturated output power and 19 dB of large-signal gain while achieving greater than 39% power-added efficiency. The QPA1019 is packaged in a plastic overmold QFN with a Cu paddle offering easy handling with good thermal properties. As a result, the QPA1019 has bias flexibility allowing the user to vary the voltage to achieve optimum Key Features system performance while maintaining high reliability. Frequency Range: 4.57.0 GHz The QPA1019 is matched to 50 ohms with integrated DC PSAT (PIN=22 dBm): > 40 dBm blocking caps on both I/O ports. With the high performance, PAE (P =22 dBm): > 40 % IN good thermal characteristics and ease of handling and Power Gain (PIN=22 dBm): > 19 dB system integration, the QPA1019 is ideal for radar and Integrated Power Detector satellite communication systems. Bias: V = 22 V, I = 290 mA, V = 2.5 V typical D DQ G Lead-free and RoHS compliant. Package Dimensions: 5.0 x 5.0 x 0.85 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram Applications C-Band Radar Satellite Communication RF In RF Out Ordering Information Part No. Description QPA1019 4.57.0GHz 10W GaN Power Amplifier QPA1019S2 Samples (2 pcs. pack) V DET QPA1019TR7 250 pieces on a 7 reel (standard) QPA1019EVB Evaluation Board for QPA1019 Data Sheet Rev. A, September 28, 2018 1 of 21 www.qorvo.com QPA1019 4.57.0 GHz 10 W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/ Range Parameter Min Typ Max Units Drain Voltage (V ) 29.5 Drain Voltage (VD) +22 V D Drain Current, Quiescent (I ) 290 mA DQ Gate Voltage Range (V ) 6 to 0 V G Drain Current, RF (I ) See charts page 3 - 8 mA D Drive Drain Current (ID1, ID2) 0.52, 2.0 A Gate Voltage Typ. Range (V ) 2 to -2.8 V G Gate Current (IG) See chart Gate Current, RF (IG Drive) See charts page 5 - 8 mA Power Dissipation (PDISS), CW, 85C 25.2 W Operating Temp. Range 40 +25 +85 C Input Power (PIN), CW, 50 , 28 dBm VD=22 V, IDQ=290 mA, 85 C Electrical specifications are measured at specified test Input Power (PIN), CW, 4:1 VSWR, conditions. Specifications are not guaranteed over all 25 dBm V =22 V , I =290 mA, 85 C recommended operating conditions. D DQ Channel Temperature (T ) 275 C CH Gate Current Maximum vs. T vs. Stage CH 50 Mounting Temperature (30 seconds) 260 C Total 45 Stage 2 Storage Temperature 55 to 150 C 40 Stage 1 Operation of this device outside the parameter ranges given 35 above may cause permanent damage. These are stress ratings 30 only, and functional operation of the device at these conditions is not implied. 25 20 15 10 5 0 125 135 145 155 165 175 185 195 205 215 225 0 Channel Temperature ( C) Electrical Specifications (1) (2) Parameter Conditions Min Typ Max Units Operational Frequency Range 4.5 7.0 GHz Output Power at Saturation, P P = +22 dBm 39 41 dBm SAT IN P = +22 dBm Frequency = 4.5 5.5 GHz 45 IN Power Added Efficiency, PAE 35 % P = +22 dBm Frequency = 6.0 7.0 GHz 40 IN Small Signal Gain, S21 30 dB Input Return Loss, IRL 15 dB Output Return Loss, ORL 7 dB RD 3 Intermodulation Products, IM3 P = +32 dBm Frequency = 5.7 GHz 25 dBc OUT/TONE P Temperature Coefficient T = +25C to +85C P = +22 dBm 0.007 dBm/C SAT DIFF IN S21 Temperature Coefficient T = 40C to +85C 0.050 dB/C DIFF Notes: 1. Test conditions unless otherwise noted: CW, V = 22 V, I = 290 mA, V = -2.5V +/- typical , T =+25C, Z =50 D DQ G BASE 0 2. T is back side of package BASE Data Sheet Rev. A, September 28, 2018 2 of 21 www.qorvo.com I Maximum (mA) G