X-On Electronics has gained recognition as a prominent supplier of GRF2373 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. GRF2373 RF Amplifier are a product manufactured by Guerrilla RF. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

GRF2373 Guerrilla RF

GRF2373 electronic component of Guerrilla RF
GRF2373 Guerrilla RF
GRF2373 RF Amplifier
GRF2373 Semiconductors

Images are for reference only
See Product Specifications
Part No. GRF2373
Manufacturer: Guerrilla RF
Category: RF Amplifier
Description: RF Amplifier Low Current, High Gain LNA/Driver; ISM, Infrastructure, 0.1 - 3.8 GHz
Datasheet: GRF2373 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.1625 ea
Line Total: USD 3.16 
Availability - 1461
Ship by Mon. 28 Apr to Wed. 30 Apr
MOQ: 1  Multiples: 1
Pack Size: 1

 GRF2373 More Buying Options & Price Grid(s)

Availability Price Quantity
1461
Ship by Mon. 28 Apr to Wed. 30 Apr
MOQ : 1
Multiples : 1
1 : USD 3.1625
10 : USD 2.004
25 : USD 1.661
100 : USD 1.441
250 : USD 1.353
500 : USD 1.21
1000 : USD 1.111
2500 : USD 0.9867
5000 : USD 0.9867

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Technology
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Operating Supply Current
Packaging
Test Frequency
Brand
Number Of Channels
Hts Code
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the GRF2373 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GRF2373 and other electronic components in the RF Amplifier category and beyond.

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Additional Infomation About Product

GRF2373 Released Low-current LNA/Driver 0.1 3.8 GHz Product Description GRF2373 can serve as a low current, high gain LNA or linear driver tunable over 100 to 3800 MHz. It exhibits outstanding gain and NF with a typical bias condition of 3.3 volts and 15 mA. Iccq. The device is operated from a supply voltage (VCC) of 1.8 to 5.0 V with a selectable ICCQ range of 10 to 25 mA for Features optimal efficiency and linearity. Consult with the GRF applications engineering team for Reference: 3.3V/15mA/1950 MHz custom tuning/evaluation board data and device s- parameters. EVB NF: 1.3 dB Gain: 18.0 dB OP1dB: 13.0 dBm OIP3: 25.0 Flexible Bias Voltage and Current Process: InGaP HBT Applications Drones Small Cells and Cellular Repeaters Distributed Antenna Systems Set Top Boxes General Purpose Amplification VHF/UHF/900/2400 ISM TM TM Guerrilla RF Proprietary Information. Guerrilla RF and the composite logo of Guerrilla RF are trademarks of Guerrilla RF, Inc. 2014 Guerrilla RF, Inc. All rights reserved. Please contact Guerrilla RF at (+1) 336-510-7840 or sales guerrilla-rf.com Revision Date: 01/14/20 1 GRF2373 Released Low-current LNA/Driver 0.1 3.8 GHz Absolute Ratings: Parameter Symbol Min. Max. Unit Supply Voltage VCC 0 5.5 V RF Input Power: (Load VSWR < 2:1 VCC: 5.0 volts) PIN MAX 22 dBm Operating Temperature (Package Heat Sink) T -40 85 C AMB Maximum Junction Temperature TMAX 150 C (MTTF > 10 6 Hours) Maximum Dissipated Power PDISS MAX 100 mW Electrostatic Discharge: Charged Device Model: (TBD) CDM 1500 V Human Body Model: (TBD) HBM 250 V Storage: Storage Temperature TSTG -65 150 C Moisture Sensitivity Level MSL TBD -- Caution ESD Sensitive Device Exceeding Absolute Maximum Rating conditions may cause permanent damage to the device. Note: For manufacturing information, see the Guerrilla -RF.com website for the following docu- ment located on the GRF2373 landing page: Manufacturing NoteMN-001 Product Tape and Reel, Solderability and Package Outline Specicatifi on. Link to manufacturing note TM TM Guerrilla RF Proprietary Information. Guerrilla RF and the composite logo of Guerrilla RF are trademarks of Guerrilla RF, Inc. 2014 Guerrilla RF, Inc. All rights reserved. Please contact Guerrilla RF at (+1) 336-510-7840 or sales guerrilla-rf.com Revision Date: 01/14/20 2

HS Compliance

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:

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