QPA1022D Qorvo

QPA1022D 8.511 GHz 4 W GaN Power Amplifier Product Overview Qorvos QPA1022D is a MMIC power amplifier fabricated on Qorvos production 0.15 um GaN on SiC process (QGaN15). Covering 8.511.0 GHz, the QPA1022D provides > 4 W of saturated output power and 24 dB of large-signal gain while achieving 45% power-added efficiency. The QPA1022D is matched to 50 with integrated DC blocking capacitors at RF output and DC grounded input port. It also has a built-in power detector for system RF power checking. With a compact dimension of 2.65 x 1.25 x 0.10 mm, it can support tight lattice spacing requirements for phased array radar applications. It is also an ideal component to support test instrumentation and commercial Functional Block Diagram communication systems. Key Features Frequency Range: 8.511 GHz PSAT (PIN=12 dBm): 36 dBm PAE (PIN=12 dBm): 45 % Power Gain (PIN= 12 dBm): 24 dB Small Signal Gain: 31 dB Bias: V = 22 V, I = 180 mA D DQ Die Dimensions: 2.63 x 1.23 x 0.10 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Ordering Information Applications Radar Part No. Description Electronic Warfare QPA1022D 8.5 to 11 GHz 4 W GaN Power Amplifier Communications QPA1022DS2 Device Sample (2 pcs) Instrumentations QPA1022DEVB Evaluation Board for QPA1022D Data Sheet Rev B, Feb 2021 Subject to change without notice 1 of 17 www.qorvo.com QPA1022D 8.5 11 GHz 4 W GaN Power Amplifier Absolute Maximum Ratings Parameter Value/Range Units Drain Voltage (VD) 28 V Gate Voltage Range (VG) -5 to 0 V Drain Current (ID) 600 mA Gate Current (IG) 10 mA Input Power (PIN), 3:1 VSWR, VD=22 V, IDQ=180 mA, 85 C 27 dBm Storage Temperature -55 to +150 C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Recommended Operating Conditions Parameter Value/Range Units Drain Voltage (V ) 22 V D Drain Current (IDQ) 180 mA Operating Temperature 40 to + 85 C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test conditions unless otherwise noted: Temp = 25 C, V = 22 V, I = 180 mA. Data de-embedded to the reference planes. D DQ Parameter Min Typ Max Units Operational Frequency 8.5 11 GHz Output Power (Pulse and CW, PIN=12 dBm) 36.5 dBm Power Added Efficiency (Pulse and CW, P = 12 dBm) 45 % IN Large Signal Gain (Pulse and CW, PIN=12 dBm) 24.5 dB Small Signal Gain 31 dB Input Return Loss 17 dB Output Return Loss 7 dB Harmonic Suppression (CW POUT = 36 dBm, 2f0) 27 dBc POUT Temp. Coeff. (PIN = 12 dBm) 0.001 dB/C Small Signal Gain Temp. Coefficient 0.087 dB/C Note: For pulse power, Pulse Width = 100 uS, Duty Cycle = 10% Data Sheet Rev B, Feb 2021 Subject to change without notice 2 of 17 www.qorvo.com