X-On Electronics has gained recognition as a prominent supplier of QPA2308 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. QPA2308 RF Amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

QPA2308 Qorvo

QPA2308 electronic component of Qorvo
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Part No.QPA2308
Manufacturer: Qorvo
Category: RF Amplifier
Description: RF Amplifier 5-6 GHz 60 Watt GaN Power Amplifier
Datasheet: QPA2308 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Obsolete
Availability Price Quantity
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MOQ : 1
Multiples : 1
1 : USD 822.2794
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Obsolete
   
Manufacturer
Product Category
RoHS - XON
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Mounting Style
Package / Case
Type
Technology
Operating Frequency
Gain
Operating Supply Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Operating Supply Current
Series
Brand
Number Of Channels
Development Kit
Input Return Loss
Product Type
Factory Pack Quantity :
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We are delighted to provide the QPA2308 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QPA2308 and other electronic components in the RF Amplifier category and beyond.

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QPA2308 56 GHz 60 Watt GaN Power Amplifier Product Overview Qorvos QPA2308 is a MMIC power amplifier fabricated on Qorvos production 0.25 um GaN on SiC process (QGaN25). Operating from 5.06.0 GHz, the QPA2308 produces greater than 60 W of saturated output power and greater than 21 dB of large-signal gain while achieving greater than 47% power-added efficiency. The QPA2308 is offered in a 10-lead 0.6 x 0.6 in bolt-down package. Assembled with a pure-copper base, coupled with its high efficiency, the QPA2308 minimizes the strain on the system-level cooling requirements, further reducing system operating costs. The QPA2308 s performance Key Features makes it well suited for both commercial and military applications Frequency Range: 5.0 6.0 GHz P (P =26 dBm): 48 dBm SAT IN Both RF ports are fully matched to 50 ohms with integrated PAE (P =26 dBm): 47 % IN DC blocking capacitors thereby simplifying system Power Gain (PIN=26 dBm): 22 dB integration. Small Signal Gain: > 30 dB Bias (pulsed): VD = 28 V, IDQ = 1200 mA Lead-free and RoHS compliant. Package Dimensions: 0.6 x 0.6 x 0.138 in. Package base is pure Cu offering superior thermal management. Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram Applications C-Band Radar Satellite Communications 1 10 2 9 3 8 4 7 5 6 Ordering Information Part No. Description QPA2308 5-6 GHz 60 Watt GaN Power Amplifier QPA2308S2 Samples (2 pcs.) QPA2308EVB1 Evaluation Board for QPA2308 Data Sheet Rev. A, February 2019 Subject to change without notice 1 of 17 www.qorvo.com QPA2308 56 GHz 60 Watt GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/Rang Parameter Value/Range e Drain Voltage (VD) 40 V Drain Voltage (VD) 28 V Gate Voltage Range (VG) 8 V to +1 V Drain Current (IDQ) 1200 mA Drain Current (ID) 7600 mA Operating Temperature 40 to +85 C Electrical specifications are measured at specified test Gate Current (IG) See plot pg.12 conditions. Specifications are not guaranteed over all Power Dissipation (P ), 50 , Pulsed, DISS recommended operating conditions. 169 W 85 C Input Power (PIN), 50 , Pulsed, 32 dBm V =28 V, I =1.2 A, 85 C D DQ Input Power (P ), 3.5:1 VSWR, Pulsed, IN 32 dBm VD=28 V, IDQ=1.2 A, 85 C Soldering Temperature (30 seconds, 320 C maximum) Storage Temperature 55 to +125 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Data Sheet Rev. A, February 2019 Subject to change without notice 2 of 17 www.qorvo.com

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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