QPA2308 56 GHz 60 Watt GaN Power Amplifier Product Overview Qorvos QPA2308 is a MMIC power amplifier fabricated on Qorvos production 0.25 um GaN on SiC process (QGaN25). Operating from 5.06.0 GHz, the QPA2308 produces greater than 60 W of saturated output power and greater than 21 dB of large-signal gain while achieving greater than 47% power-added efficiency. The QPA2308 is offered in a 10-lead 0.6 x 0.6 in bolt-down package. Assembled with a pure-copper base, coupled with its high efficiency, the QPA2308 minimizes the strain on the system-level cooling requirements, further reducing system operating costs. The QPA2308 s performance Key Features makes it well suited for both commercial and military applications Frequency Range: 5.0 6.0 GHz P (P =26 dBm): 48 dBm SAT IN Both RF ports are fully matched to 50 ohms with integrated PAE (P =26 dBm): 47 % IN DC blocking capacitors thereby simplifying system Power Gain (PIN=26 dBm): 22 dB integration. Small Signal Gain: > 30 dB Bias (pulsed): VD = 28 V, IDQ = 1200 mA Lead-free and RoHS compliant. Package Dimensions: 0.6 x 0.6 x 0.138 in. Package base is pure Cu offering superior thermal management. Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram Applications C-Band Radar Satellite Communications 1 10 2 9 3 8 4 7 5 6 Ordering Information Part No. Description QPA2308 5-6 GHz 60 Watt GaN Power Amplifier QPA2308S2 Samples (2 pcs.) QPA2308EVB1 Evaluation Board for QPA2308 Data Sheet Rev. A, February 2019 Subject to change without notice 1 of 17 www.qorvo.com QPA2308 56 GHz 60 Watt GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/Rang Parameter Value/Range e Drain Voltage (VD) 40 V Drain Voltage (VD) 28 V Gate Voltage Range (VG) 8 V to +1 V Drain Current (IDQ) 1200 mA Drain Current (ID) 7600 mA Operating Temperature 40 to +85 C Electrical specifications are measured at specified test Gate Current (IG) See plot pg.12 conditions. Specifications are not guaranteed over all Power Dissipation (P ), 50 , Pulsed, DISS recommended operating conditions. 169 W 85 C Input Power (PIN), 50 , Pulsed, 32 dBm V =28 V, I =1.2 A, 85 C D DQ Input Power (P ), 3.5:1 VSWR, Pulsed, IN 32 dBm VD=28 V, IDQ=1.2 A, 85 C Soldering Temperature (30 seconds, 320 C maximum) Storage Temperature 55 to +125 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Data Sheet Rev. A, February 2019 Subject to change without notice 2 of 17 www.qorvo.com