QPM2239 13 15.5GHz 80W GaN Power Amplifier Module Product Overview Qorvos QPM2239 is a packaged, high-power Ku-band amplifier module, fabricated on Qorvos production 0.25 um GaN on SiC process (QGaN25). Covering 1315.5 GHz, the QPM2239 provides 80 W of saturated output power and 29 dB of small-signal gain while achieving > 25% power-added efficiency. The QPM2239 is packaged in a 10-lead 19.05 x 19.05 mm bolt-down package with a Cu base for superior thermal management. It can support a variety of operating Key Features conditions to best support system requirements. With good thermal properties, it can support a range of bias Frequency Range: 13 15.5 GHz voltages and will perform well under CW operation. PSAT (PIN = 25 dBm): 49 dBm PAE (P = 25 dBm): > 25 % IN The QPM2239 has DC blocking capacitors on both RF ports, which are matched to 50 ohms. IM3 ( POUT/Tone = 38 dBm): -22 dBc Small Signal Gain: 29 dB The QPM2239 is ideal for supporting communications and Bias: CW, V = +28 V, I = 800 mA, V = -2.5 V typ. D DQ G radar applications in both commercial and military markets Package Dimensions: 19.05 x 19.05 x 4.5 mm RoHS compliant Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram Applications Commercial VSAT Military Satcom Datalinks Radar 1 10 2 9 3 8 Ordering Information 4 7 5 6 Part No. Description QPM2239 13-15.5GHz 80W GaN Power Amplifier Module QPM2239S2 Samples (2 pcs. pack) QPM2239EVB1 Evaluation Board for QPM2239 Data Sheet Rev. A, December 19, 2018 1 of 18 www.qorvo.com QPM2239 13 15.5GHz 80W GaN Power Amplifier Module Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/ Range Parameter Min Typ Max Units Drain Voltage (VD) +28 V Drain Voltage (VD) +29.5 V Drain Current, Quiescent (IDQ) 800 900 mA Gate Voltage Range (V ) 6 to 0 V G Drain Current, RF (I ) See chart page 3, 4, 6 mA D Drive Drain Current (I ) 12.5 A D Gate Voltage Typ. Range (V ) 2 to -2.9 V G Gate Current (I ) See chart page 13 G Gate Current, RF (I ) See chart page 6 mA G Drive Power Dissipation (P ), 85 C 234 W DISS TBASE Range 40 +85 C Input Power (PIN), CW, 50 , 28 dBm Electrical specifications are measured at specified test conditions. V =28 V, I =800 mA, T = 85 C D DQ BASE Specifications are not guaranteed over all recommended operating Input Power (P ), CW, 3:1 VSWR, IN conditions. 27 dBm VD =28 V, IDQ =800 mA, TBASE = 85 C Soldering Temperature (30 seconds) 260 C Storage Temperature 55 to +150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications (1) (2) Parameter Conditions Min Typ Max Units Operational Frequency Range 13 15.5 GHz Output Power at Saturation, PSAT PIN = +25 dBm 49 dBm Power Added Efficiency, PAE PIN = +25 dBm 25 % RD 3 Intermodulation Products, IM3 POUT/Tone = +38 dBm f = 10 MH z 22 dBc TH 5 Intermodulation Products, IM5 POUT/Tone = +38 dBm f = 10 MH z 30 dBc Small Signal Gain, S21 29 dB Input Return Loss, IRL 15 dB Output Return Loss, ORL 15 dB PSAT Temperature Coefficient TDIFF = 40C to +85C PIN = +25 dBm 0.01 dBm/C S21 Temperature Coefficient TDIFF = 40C to +85C 0.11 dB/C Notes: 1. Test conditions unless otherwise noted: CW, V = 28 V, I = 800 mA, V = -2.5V +/- typical , T =+25C, Z =50 D DQ G BASE 0 2. T is back side of package BASE Data Sheet Rev. A, December 19, 2018 2 of 18 www.qorvo.com