DocumentNumber:A2I09VD050N NXPSemiconductors Rev. 0, 09/2018 Technical Data RFLDMOSWidebandIntegrated A2I09VD050NR1 PowerAmplifiers A2I09VD050GNR1 The A2I09VD050N wideband integrated circuit is designed with on--chip matchingthatmakes itusablefrom575to960MHz. This multi--stage structure is rated for 48 to 55 V operation and covers all typical cellular base 575960MHz,6.3WAVG.,48V station modulation formats. AIRFASTRFLDMOSWIDEBAND 900MHz INTEGRATEDPOWERAMPLIFIERS Typical Single--Carrier W--CDMA CharacterizationPerformance: V =48Vdc,I =74mA,I = 240 mA, P = 6.3W Avg., DD DQ1(A+B) DQ2(A+B) out (1) Input Signal PAR = 9.9 dB 0.01%Probability onCCDF. G PAE ACPR ps Frequency (dB) (%) (dBc) 920 MHz 36.8 19.7 45.5 TO--270WB--15 PLASTIC 940 MHz 36.8 19.9 45.9 A2I09VD050NR1 960 MHz 36.6 19.8 45.8 Features On--chipmatching(50ohm input, DC blocked) Integratedquiescent current temperaturecompensationwith TO--270WBG--15 (2) enable/disable function PLASTIC Designedfor digital predistortionerror correctionsystems A2I09VD050GNR1 Optimizedfor Doherty applications V DS1A V 1 DS1A V 2 GS2A RF inA RF /V out1 DS2A 15 V 3 GS1A RF 4 RF /V inA out1 DS2A N.C. 5 V GS1A QuiescentCurrent N.C. 6 14 N.C. (2) V TemperatureCompensation N.C. 7 GS2A N.C. 8 V 13 RF 9 GS1B QuiescentCurrent inB RF /V out2 DS2B V 10 (2) GS1B V TemperatureCompensation GS2B V 11 GS2B V 12 DS1B RF inB RF /V out2 DS2B (Top View) Note: Exposed backside of the package is V DS1B the source terminalforthe transistor. Figure1.FunctionalBlockDiagram Figure2.PinConnections 1. Alldata measured in fixture with device soldered to heatsink. 2. RefertoAN1977, Quiescent Current ThermalTracking Circuit in the RF Integrated Circuit Family,andtoAN1987, Quiescent Current Controlfor the RF Integrated Circuit Device Family.GotoTable1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V 0.5, +105 Vdc DSS Gate--Source Voltage V 0.5, +10 Vdc GS Operating Voltage V 55, +0 Vdc DD Storage Temperature Range T 65 to +150 C stg Case Operating Temperature Range T 40 to +150 C C (1,2) Operating Junction Temperature Range T 40 to +225 C J Input Power P 20 dBm in Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R C/W JC Case Temperature 73C, 6.3 W, 940 MHz Stage1, 48Vdc, I =74mA 3.2 DQ1(A+B) Stage2, 48Vdc, I =240mA 1.5 DQ2(A+B) Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJS--001--2017) 1A Charge Device Model(perJS--002--2014) C0B Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113, IPC/JEDECJ--STD--020 3 260 C 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at