DocumentNumber:AFSC5G26D37 NXPSemiconductors Rev. 4, 05/2019 Technical Data PowerAmplifierModuleforLTEand AFSC5G26D37 5G TheAFSC5G26D37isafullyintegratedDohertypoweramplifiermodule designedforwirelessinfrastructureapplicationsthatdemandhigh performance in the smallest footprint. Ideal for applications in massive MIMO 24962690MHz,27dB,5WAvg. systems,outdoorsmallcells,andlowpowerremoteradioheads.The AIRFASTPOWERAMPLIFIER field--provenLDMOSpoweramplifiersaredesignedforTDDandFDDLTE MODULE systems. Typical LTE Performance: P =5WAvg.,V =28Vdc,1 20MHz LTE, out DD (1) Input Signal PAR = 8 dB 0.01% Probability on CCDF. CarrierCenter Gain ACPR PAE Frequency (dB) (dBc) (%) 2575 MHz 27.4 27.8 40.0 2600 MHz 27.2 27.9 39.9 2625 MHz 27.1 27.7 40.0 1. Alldata measured with device soldered in NXP reference circuit. 10mm 6mmModule Features Frequency: Designed for 25452655 MHz. Operates across 24962690 MHz. Advanced high performance in--package Doherty Fully matched (50 ohm input/output, DC blocked) Designed for low complexity analog or digital linearizationsystems 20172019 NXP B.V. AFSC5G26D37 RF DeviceData NXP Semiconductors 1Pin 1 index area GND 1 18 GND GND 2 17 RF out V 3 16 GND DP2 V 4 15 GND DP1 RF 5 14 GND in (Top View) Pin 1 index area 18 1 17 2 16 27 3 15 4 14 5 (Bottom View) Note: Exposed backside of the package is DC and RF ground. Figure1.PinConnections AFSC5G26D37 RF DeviceData NXP Semiconductors 2 13 19 V 6 26 GND GP2 12 20 V 7 25 GND GP1 11 21 V GC 1 8 24 GND 10 22 V 9 23 GND GC 2 9 23 V 10 22 GND DC1 8 24 V DC2 11 21 GND 7 25 GND 12 20 GND 6 26 GND 13 19 GND
