AFSC5G35D35-EVB NXP

DocumentNumber:AFSC5G35D35 NXPSemiconductors Rev. 2, 05/2019 TechnicalData PowerAmplifierModuleforLTEand AFSC5G35D35 5G TheAFSC5G35D35isafullyintegratedDohertypoweramplifiermodule designedforwirelessinfrastructureapplicationsthatdemandhigh 34003600MHz,26dB,3WAvg. performance in the smallest footprint. Ideal for applications in massive MIMO AIRFASTPOWERAMPLIFIER systems,outdoorsmallcells,andlowpowerremoteradioheads.The MODULE field--provenLDMOSpoweramplifiersaredesignedforTDDandFDDLTE systems. Typical LTE Performance: P =3WAvg.,V =24Vdc,1 20MHz LTE, out DD (1) Input SignalPAR = 8dB 0.01%Probability onCCDF. CarrierCenter Gain ACPR PAE Frequency (dB) (dBc) (%) 3400MHz 25.3 27.6 37.1 3500MHz 24.9 30.8 36.7 3600MHz 24.7 32.9 35.4 1. AlldatameasuredwithdevicesolderedinNXP referencecircuit. 10mm 6mmModule Features Frequency: 34003600MHz Advancedhighperformancein--packageDoherty Fully matched(50ohm input/output, DC blocked) Designedfor low complexity analogor digitallinearizationsystems 20182019NXPB.V. AFSC5G35D35 RF DeviceData NXP Semiconductors 1Pin 1 index area GND 1 18 GND N.C. 2 17 RF out (1) V 3 16 GND DP2 V 4 15 GND DP1 RF 5 14 GND in (Top View) Pin 1 index area 18 1 17 2 16 27 3 15 4 14 5 (Bottom View) Note: Exposed backside of the package is DC and RF ground. Figure1.PinConnections 1. V andV areDCcoupledinternaltothepackageandmustbepoweredby asingleDCpowersupply. DP2 DC2 AFSC5G35D35 RF DeviceData NXP Semiconductors 2 V 13 19 6 26 GND GP2 12 20 V 7 25 GND GP1 11 21 V 8 24 GND GC 1 V 10 22 9 23 GND GC 2 9 23 V 10 22 GND DC1 (1) V 8 24 11 21 GND DC2 7 25 N.C. 12 20 GND 19 6 26 GND 13 GND