DocumentNumber:AFT05MS003N FreescaleSemiconductor Rev. 0, 8/2015 TechnicalData RFPowerLDMOSTransistor HighRuggedness N--Channel AFT05MS003N Enhancement--ModeLateral MOSFET Designedforhandheldtwo--wayradioapplications withfrequencies from1.8 to 941 MHz. The highgain, ruggedness and widebandperformance of this device make it ideal for large--signal, common--source amplifier applications in 1.8941MHz,3W,7.5V handheldradioequipment. WIDEBAND Wideband Performance (7.5 Vdc, T =25 C, CW) AIRFASTRFPOWER A LDMOSTRANSISTOR Frequency P G P in ps D out (MHz) (dBm) (dB) (%) (W) (1,4) 136174 17.8 17.1 67.1 3.2 (2,4) 350520 20.0 15.1 73.0 3.2 NarrowbandPerformance (7.5Vdc,T =25 C,CW) A Frequency G P ps D out (MHz) (dB) (%) (W) SOT--89 (3) 520 20.8 68.3 3.0 LoadMismatch/Ruggedness Frequency Signal P Test in Source (MHz) Type VSWR (dBm) Voltage Result 2 (3) 520 CW >65:1atall 21.1 9.0 NoDevice PhaseAngles Degradation 1. Measuredin136174 MHz VHFbroadbandreferencecircuit. 1 23 2. Measuredin350520MHz UHFbroadbandreferencecircuit. 3. Measuredin520MHz narrowbandproductiontestcircuit. Gate Source Drain 4. Thevaluesshownarethecenterbandperformancenumbersacrosstheindicated frequency range. Figure1.PinConnections Features Characterizedfor Operationfrom 1.8to941MHz UnmatchedInput andOutput AllowingWideFrequency RangeUtilization IntegratedESD Protection IntegratedStability Enhancements Wideband FullPower Across theBand ExceptionalThermalPerformance ExtremeRuggedness TypicalApplications Output StageVHF BandHandheldRadio Output StageUHF BandHandheldRadio Output Stagefor 700900MHz HandheldRadio Smart Metering Driver for 1.8941MHz Applications FreescaleSemiconductor, Inc., 2015. All rights reserved. AFT05MS003N RF DeviceData FreescaleSemiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V 0.5,+30 Vdc DSS Gate--SourceVoltage V 6.0,+12 Vdc GS OperatingVoltage V 12.5,+0 Vdc DD StorageTemperatureRange T 65to+150 C stg CaseOperatingTemperatureRange T 40to+150 C C (1,2) OperatingJunctionTemperatureRange T 40to+150 C J TotalDeviceDissipation T =25 C P 30.5 W C D Derateabove25 C 0.24 W/ C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R 4.1 C/W JC CaseTemperature79C,3W CW,7.5Vdc,I =100mA,520MHz DQ Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 1C,passes 1000V MachineModel(perEIA/JESD22--A115) A,passes 100V ChargeDeviceModel(perJESD22--C101) IV,passes 2000V Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 1 260 C Table5.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 2 Adc DSS (V =30Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =7.5Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 500 nAdc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 1.8 2.2 2.6 Vdc GS(th) (V =10Vdc,I =67 Adc) DS D Drain--SourceOn--Voltage V 0.25 Vdc DS(on) (V =10Vdc,I =700mAdc) GS D ForwardTransconductance g 3.1 S fs (V =7.5Vdc,I =2.6Adc) DS D DynamicCharacteristics ReverseTransferCapacitance C 1.1 pF rss (V =7.5Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS OutputCapacitance C 23.2 pF oss (V =7.5Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS InputCapacitance C 38.5 pF iss (V =7.5Vdc,V =0Vdc 30mV(rms)ac 1MHz) DS GS 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableat