DocumentNumber:AFT09MP055N FreescaleSemiconductor Rev. 0, 7/2013 TechnicalData RFPowerLDMOSTransistors HighRuggedness N--Channel AFT09MP055NR1 Enhancement--ModeLateral MOSFETs AFT09MP055GNR1 Designed for mobile two--way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source amplifier 764--941MHz,55W,12.5V applications inmobileradioequipment. BROADBAND NarrowbandPerformance RFPOWERLDMOSTRANSISTORS (InFreescaleTest Circuit: 12.5Vdc, I =550mA,T =25 C,CW) DQ(A+B) A Frequency G P ps D out (MHz) (dB) (%) (W) 870 17.5 69.0 57 800MHz Broadband Performance (In Freescale Reference Circuit: 12.5 Vdc, I = 800 mA, P =1.5W,T =25 C, CW) DQ(A+B) in A TO--270WB--4 Frequency G P ps D out AFT09MP055NR1 (MHz) (dB) (%) (W) 764 16.1 56.0 61 816 15.8 58.0 57 870 15.7 61.0 56 LoadMismatch/Ruggedness Frequency Signal P Test in TO--270WB--4GULL (MHz) Type VSWR (W) Voltage Result AFT09MP055GNR1 (1) 870 CW >65:1 at all 3 17 NoDevice PhaseAngles (3dB Overdrive) Degradation 1. Measuredin764--870MHz broadbandtest circuit. Features GateA DrainA Characterizedfor Operationfrom 764to941MHz IntegratedInput MatchingImproves BroadbandPerformance IntegratedESD Protection GateB DrainB Broadband Full Power Across theBand(764--870MHz) 225C CapablePlastic Package Exceptional Thermal Performance (Top View) ExtremeRuggedness Note: Exposed backside of the package is HighLinearity for: TETRA, SSB thesourceterminalforthetransistor. Cost--effectiveOver--moldedPlastic Packaging Figure1.PinConnections InTapeandReel. R1Suffix = 500Units, 44mm TapeWidth, 13--inchReel. TypicalApplications Output Stage800MHz BandMobileRadio Output Stage700MHz BandMobileRadio This document contains information on a preproduction product. Specifications and informationherein are subject tochange without notice. FreescaleSemiconductor, Inc., 2013. All rights reserved. AFT09MP055NR1AFT09MP055GNR1 RF DeviceData FreescaleSemiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5,+40 Vdc DSS Gate--SourceVoltage V --6.0,+12 Vdc GS Operating Voltage V 19,+0 Vdc DD StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperatureRange T --40to+150 C C (1,2) OperatingJunctionTemperatureRange T --40to+225 C J TotalDeviceDissipation T =25 C P 625 W C D Derateabove25 C 3.13 W/ C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R 0.32 C/W JC CaseTemperature78C,55W CW,12.5Vdc,I =550mA,870MHz DQ(A+B) Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2,passes 2500V MachineModel(perEIA/JESD22--A115) A,passes 150V ChargeDeviceModel(perJESD22--C101) IV,passes 2000V Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Zero Gate Voltage Drain Leakage Current I 3 Adc DSS (V =40Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 2 Adc DSS (V =12.5Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 1.6 2.1 2.6 Vdc GS(th) (V =10Vdc,I =270 Adc) DS D Drain--SourceOn--Voltage V 0.14 Vdc DS(on) (V =10Vdc,I =2.85Adc) GS D (4) ForwardTransconductance g 7 S fs (V =10Vdc,I =7.5Adc) GS D 1. Continuous useat maximum temperaturewillaffect MTTF. 2. MTTFcalculatoravailableat