X-On Electronics has gained recognition as a prominent supplier of MMRF1009HR5 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. MMRF1009HR5 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

MMRF1009HR5 NXP

MMRF1009HR5 electronic component of NXP
MMRF1009HR5 NXP
MMRF1009HR5 RF MOSFET Transistors
MMRF1009HR5  Semiconductors

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Part No. MMRF1009HR5
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors RF Power MOSFET 960- 1215 MHz 500 W 50 V
Datasheet: MMRF1009HR5 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
50: USD 666.3353 ea
Line Total: USD 33316.76 
Availability - 0
MOQ: 50  Multiples: 50
Pack Size: 50
Availability Price Quantity
0
Ship by Tue. 06 May to Mon. 12 May
MOQ : 50
Multiples : 50
50 : USD 666.3353

   
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We are delighted to provide the MMRF1009HR5 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMRF1009HR5 and other electronic components in the RF MOSFET Transistors category and beyond.

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DocumentNumber:MMRF1009H FreescaleSemiconductor Rev. 0, 1/2014 TechnicalData RFPowerFieldEffectTransistors N--Channel Enhancement--ModeLateral MOSFETs MMRF1009HR5 RF power transistors designed for applications operating at frequencies MMRF1009HSR5 from900to1215MHz.Thesedevicesaresuitableforuseindefenseand commercialpulseapplications, suchas IFF andDME. TypicalPulsePerformance: V =50Vdc,I = 200mA, DD DQ PulseWidth= 128 sec, Duty Cycle= 10% P f G 960--1215MHz,500W,50V out ps D Application (W) (MHz) (dB) (%) PULSE LATERALN--CHANNEL Narrowband 500Peak 1030 19.7 62.0 RFPOWERMOSFETs Broadband 500Peak 960--1215 18.5 57.0 Capableof Handling10:1VSWR, @ 50Vdc, 1030MHz, 500W Peak Power Features CharacterizedwithSeries Equivalent Large--SignalImpedanceParameters Internally Matchedfor Easeof Use QualifiedUptoaMaximum of 50V Operation DD IntegratedESD Protection NI--780H--2L Greater NegativeGate--SourceVoltageRangefor ImprovedClass C MMRF1009HR5 Operation InTapeandReel. R5Suffix = 50Units, 56mm TapeWidth, 13--inchReel. NI--780S--2L MMRF1009HSR5 Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+110 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 150 C C (1) OperatingJunctionTemperature T 225 C J Table2.ThermalCharacteristics (2) Characteristic Symbol Value Unit ThermalImpedance,JunctiontoCase CaseTemperature80C,500W Pulse,128 sec PulseWidth,10%Duty Cycle Z 0.044 C/W JC 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. RefertoAN1955, Thermal Measurement Methodology of RF Power Amplifiers. GotoTable3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2,passes 2600V MachineModel(perEIA/JESD22--A115) B,passes 200V ChargeDeviceModel(perJESD22--C101) IV,passes 2000V Table4.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Gate--SourceLeakageCurrent I 10 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--SourceBreakdownVoltage V 110 Vdc (BR)DSS (V =0Vdc,I =200mA) GS D ZeroGateVoltageDrainLeakageCurrent I 20 Adc DSS (V =50Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 200 Adc DSS (V =90Vdc,V =0Vdc) DS GS OnCharacteristics GateThresholdVoltage V 0.9 1.7 2.4 Vdc GS(th) (V =10Vdc,I =1.32mA) DS D GateQuiescentVoltage V 1.7 2.4 3.2 Vdc GS(Q) (V =50Vdc,I =200mAdc,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.25 Vdc DS(on) (V =10Vdc,I =3.26Adc) GS D (1) DynamicCharacteristics ReverseTransferCapacitance C 0.2 pF rss (V =50Vdc 30mV(rms)ac @1MHz,V =0Vdc) DS GS OutputCapacitance C 697 pF oss (V =50Vdc 30mV(rms)ac @1MHz,V =0Vdc) DS GS InputCapacitance C 1391 pF iss (V =50Vdc,V =0Vdc 30mV(rms)ac @1MHz) DS GS FunctionalTests(InFreescaleNarrowbandTestFixture,50ohm system)V =50Vdc,I =200mA,P =500W Peak (50W Avg.), DD DQ out f=1030MHz,128 sec PulseWidth,10%Duty Cycle PowerGain G 18.5 19.7 22.0 dB ps DrainEfficiency 58.0 62.0 % D InputReturnLoss IRL --18 --9 dB TypicalBroadbandPerformance960--1215MHz (InFreescale960--1215MHz TestFixture,50ohm system)V =50Vdc, DD I =200mA,P =500W Peak (50W Avg.),f=960--1215MHz,128 sec PulseWidth,10%Duty Cycle DQ out PowerGain G 18.5 dB ps DrainEfficiency 57.0 % D 1. Partinternally matchedbothoninputandoutput. MMRF1009HR5MMRF1009HSR5 RF DeviceData FreescaleSemiconductor, Inc. 2

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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