DocumentNumber:MMRF1009H
FreescaleSemiconductor
Rev. 0, 1/2014
TechnicalData
RFPowerFieldEffectTransistors
N--Channel Enhancement--ModeLateral MOSFETs
MMRF1009HR5
RF power transistors designed for applications operating at frequencies
MMRF1009HSR5
from900to1215MHz.Thesedevicesaresuitableforuseindefenseand
commercialpulseapplications, suchas IFF andDME.
TypicalPulsePerformance: V =50Vdc,I = 200mA,
DD DQ
PulseWidth= 128 sec, Duty Cycle= 10%
P
f G 960--1215MHz,500W,50V
out
ps D
Application (W)
(MHz) (dB) (%)
PULSE
LATERALN--CHANNEL
Narrowband 500Peak 1030 19.7 62.0
RFPOWERMOSFETs
Broadband 500Peak 960--1215 18.5 57.0
Capableof Handling10:1VSWR, @ 50Vdc, 1030MHz, 500W Peak Power
Features
CharacterizedwithSeries Equivalent Large--SignalImpedanceParameters
Internally Matchedfor Easeof Use
QualifiedUptoaMaximum of 50V Operation
DD
IntegratedESD Protection
NI--780H--2L
Greater NegativeGate--SourceVoltageRangefor ImprovedClass C
MMRF1009HR5
Operation
InTapeandReel. R5Suffix = 50Units, 56mm TapeWidth, 13--inchReel.
NI--780S--2L
MMRF1009HSR5
Table1.MaximumRatings
Rating Symbol Value Unit
Drain--SourceVoltage V --0.5,+110 Vdc
DSS
Gate--SourceVoltage V --6.0,+10 Vdc
GS
StorageTemperatureRange T --65to+150 C
stg
CaseOperatingTemperature T 150 C
C
(1)
OperatingJunctionTemperature T 225 C
J
Table2.ThermalCharacteristics
(2)
Characteristic Symbol Value Unit
ThermalImpedance,JunctiontoCase
CaseTemperature80C,500W Pulse,128 sec PulseWidth,10%Duty Cycle Z 0.044 C/W
JC
1. Continuous useatmaximum temperaturewillaffectMTTF.
2. RefertoAN1955, Thermal Measurement Methodology of RF Power Amplifiers. GotoTable3.ESDProtectionCharacteristics
TestMethodology Class
HumanBody Model(perJESD22--A114) 2,passes 2600V
MachineModel(perEIA/JESD22--A115) B,passes 200V
ChargeDeviceModel(perJESD22--C101) IV,passes 2000V
Table4.ElectricalCharacteristics (T =25 Cunless otherwisenoted)
A
Characteristic Symbol Min Typ Max Unit
OffCharacteristics
Gate--SourceLeakageCurrent I 10 Adc
GSS
(V =5Vdc,V =0Vdc)
GS DS
Drain--SourceBreakdownVoltage V 110 Vdc
(BR)DSS
(V =0Vdc,I =200mA)
GS D
ZeroGateVoltageDrainLeakageCurrent I 20 Adc
DSS
(V =50Vdc,V =0Vdc)
DS GS
ZeroGateVoltageDrainLeakageCurrent I 200 Adc
DSS
(V =90Vdc,V =0Vdc)
DS GS
OnCharacteristics
GateThresholdVoltage V 0.9 1.7 2.4 Vdc
GS(th)
(V =10Vdc,I =1.32mA)
DS D
GateQuiescentVoltage V 1.7 2.4 3.2 Vdc
GS(Q)
(V =50Vdc,I =200mAdc,MeasuredinFunctionalTest)
DD D
Drain--SourceOn--Voltage V 0.25 Vdc
DS(on)
(V =10Vdc,I =3.26Adc)
GS D
(1)
DynamicCharacteristics
ReverseTransferCapacitance C 0.2 pF
rss
(V =50Vdc 30mV(rms)ac @1MHz,V =0Vdc)
DS GS
OutputCapacitance C 697 pF
oss
(V =50Vdc 30mV(rms)ac @1MHz,V =0Vdc)
DS GS
InputCapacitance C 1391 pF
iss
(V =50Vdc,V =0Vdc 30mV(rms)ac @1MHz)
DS GS
FunctionalTests(InFreescaleNarrowbandTestFixture,50ohm system)V =50Vdc,I =200mA,P =500W Peak (50W Avg.),
DD DQ out
f=1030MHz,128 sec PulseWidth,10%Duty Cycle
PowerGain G 18.5 19.7 22.0 dB
ps
DrainEfficiency 58.0 62.0 %
D
InputReturnLoss IRL --18 --9 dB
TypicalBroadbandPerformance960--1215MHz (InFreescale960--1215MHz TestFixture,50ohm system)V =50Vdc,
DD
I =200mA,P =500W Peak (50W Avg.),f=960--1215MHz,128 sec PulseWidth,10%Duty Cycle
DQ out
PowerGain G 18.5 dB
ps
DrainEfficiency 57.0 %
D
1. Partinternally matchedbothoninputandoutput.
MMRF1009HR5MMRF1009HSR5
RF DeviceData
FreescaleSemiconductor, Inc.
2