DocumentNumber:MMRF1304N FreescaleSemiconductor Rev. 0, 12/2013 TechnicalData RFPowerLDMOSTransistors HighRuggedness N--Channel MMRF1304NR1 Enhancement--ModeLateral MOSFETs MMRF1304GNR1 RFpowertransistors suitableforbothnarrowbandandbroadbandCWor pulseapplicationsoperatingatfrequenciesfrom1.8to2000MHz, suchas military radio communications and radar. These devices are fabricated using Freescalesenhancedruggednessplatformandaresuitableforusein 1.8--2000MHz,25W,50V applications wherehighVSWRs areencountered. WIDEBAND TypicalPerformance: V =50Vdc DD RFPOWERLDMOSTRANSISTORS (1) Frequency P G IMD out ps D SignalType (W) (MHz) (dB) (%) (dBc) (2,6) 1.8to30 Two--Tone 25PEP 25 51 --30 (10kHz spacing) (3,6) 30--512 Two--Tone 25PEP 17.1 30.1 --32 (200kHz spacing) TO--270--2 (4) 512 Pulse(100 sec, 25Peak 25.4 74.5 PLASTIC 20%Duty Cycle) MMRF1304NR1 (4) 512 CW 25 25.5 74.7 (5) 1030 CW 25 22.5 60 LoadMismatch/Ruggedness Frequency P Test in TO--270G--2 SignalType VSWR (MHz) (W) Voltage Result PLASTIC (2) 30 CW >65:1 0.23 50 NoDevice MMRF1304GNR1 at allPhase (3 dB Degradation Angles Overdrive) (3) 512 CW 1.6 (3 dB Overdrive) (4) 512 Pulse 0.14Peak Gate21 Drain (100 sec,20% (3 dB Duty Cycle) Overdrive) (4) 512 CW 0.14 (3 dB Overdrive (Top View) (5) 1030 CW 0.34 (3 dB Note: The backside of the package is the Overdrive sourceterminalforthetransistor. 1. Distortionproducts arereferencedtooneof twotones. Figure1.PinConnections 2. Measured in 1.8--30 MHz broadband reference circuit. 3. Measuredin30--512MHz broadbandreference circuit. 4. Measuredin512MHz narrowbandtest circuit. 5. Measuredin1030MHz narrowbandtest circuit. 6. The values shown are the minimum measured performance numbers across the indicatedfrequency range. Features WideOperatingFrequency Range ExtremeRuggedness Unmatched, Capableof Very BroadbandOperation IntegratedStability Enhancements Low Thermal Resistance ExtendedESD ProtectionCircuit InTapeandReel. R1Suffix = 500Units, 24mm TapeWidth, 13--inchReel. FreescaleSemiconductor, Inc., 2013. All rights reserved. MMRF1304NR1MMRF1304GNR1 RF DeviceData FreescaleSemiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5,+133 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T --40to+150 C C (1) OperatingJunctionTemperature T --40to+225 C J Table2.ThermalCharacteristics (2) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R 1.2 C/W JC CW: CaseTemperature80 C,25W CW,50Vdc,I =10mA,512MHz DQ ThermalImpedance,JunctiontoCase Z 0.29 C/W JC Pulse:CaseTemperature77C,25W Peak,100 sec PulseWidth, 20%Duty Cycle,50Vdc,I =10mA,512MHz DQ Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2,passes 2500V MachineModel(perEIA/JESD22--A115) B,passes 250V ChargeDeviceModel(perJESD22--C101) IV,passes 2000V Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Gate--SourceLeakageCurrent I 400 nAdc GSS (V =5Vdc,V =0Vdc) GS DS Drain--SourceBreakdownVoltage V 133 142 Vdc (BR)DSS (V =0Vdc,I =50mA) GS D Zero Gate Voltage Drain Leakage Current I 2 Adc DSS (V =50Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 7 Adc DSS (V =100Vdc,V =0Vdc) DS GS OnCharacteristics GateThresholdVoltage V 1.5 2.0 2.5 Vdc GS(th) (V =10Vdc,I =85 Adc) DS D GateQuiescentVoltage V 2.0 2.4 3.0 Vdc GS(Q) (V =50Vdc,I =10mAdc,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.28 Vdc DS(on) (V =10Vdc,I =210mAdc) GS D DynamicCharacteristics ReverseTransferCapacitance C 0.26 pF rss (V =50Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS OutputCapacitance C 14.2 pF oss (V =50Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS InputCapacitance C 39.2 pF iss (V =50Vdc,V =0Vdc 30mV(rms)ac 1MHz) DS GS 1. Continuous useat maximum temperaturewillaffect MTTF. 2. RefertoAN1955, Thermal Measurement Methodology of RF Power Amplifiers. Goto