DocumentNumber:MMRF1007H FreescaleSemiconductor Rev. 0, 12/2013 TechnicalData RFPowerFieldEffectTransistors N--Channel Enhancement--ModeLateral MOSFETs MMRF1007HR5 RF power transistors designed for applications operating at frequencies MMRF1007HSR5 from900to1215MHz.Thesedevicesaresuitableforuseindefenseand commercialpulseapplications, suchas IFF andDME. TypicalPulsePerformance: V =50Vdc,I = 150mA, P = DD DQ out 1000W Peak (100W Avg.), f = 1030MHz, PulseWidth= 128 sec, Duty 965--1215MHz,1000W,50V Cycle= 10% LATERALN--CHANNEL Power Gain 20dB BROADBAND DrainEfficiency 56% RFPOWERMOSFETs Capableof Handling5:1VSWR, 50Vdc, 1030MHz, 1000W Peak Power Features CharacterizedwithSeries Equivalent Large--SignalImpedanceParameters Internally Matchedfor Easeof Use QualifiedUptoaMaximum of 50V Operation DD IntegratedESD Protection Designedfor Push--PullOperation NI--1230H--4S Greater NegativeGate--SourceVoltageRangefor ImprovedClass C MMRF1007HR5 Operation InTapeandReel. R5Suffix = 50Units, 56mm TapeWidth, 13--inchReel. NI--1230S--4S MMRF1007HSR5 PARTSAREPUSH--PULL RF /V31 RF /V inA GSA outA DSA RF /V42 RF /V inB GSB outB DSB (TopView) Figure1.PinConnections Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+110 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 150 C C (1) OperatingJunctionTemperature T 225 C J 1. Continuous useatmaximum temperaturewillaffectMTTF. FreescaleSemiconductor, Inc., 2013. All rights reserved. MMRF1007HR5MMRF1007HSR5 RF DeviceData FreescaleSemiconductor, Inc. 1Table2.ThermalCharacteristics (1) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase Z C/W JC CaseTemperature67C,1000W Peak,128 sec PulseWidth,10%Duty Cycle, 0.02 50Vdc,I =150mA DQ CaseTemperature62C,Mode--S PulseTrain,80Pulses of32 sec On,18 sec 0.07 Off,RepeatedEvery 40msec,6.4%OverallDuty Cycle,50Vdc,I =150mA DQ Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 1B MachineModel(perEIA/JESD22--A115) B ChargeDeviceModel(perJESD22--C101) IV Table4.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit (2) OffCharacteristics Gate--SourceLeakageCurrent I 10 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--SourceBreakdownVoltage V 110 Vdc (BR)DSS (V =0Vdc,I =165mA) GS D ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =50Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 100 Adc DSS (V =100Vdc,V =0Vdc) DS GS OnCharacteristics (2) GateThresholdVoltage V 0.9 1.6 2.4 Vdc GS(th) (V =10Vdc,I =1000 Adc) DS D (3) GateQuiescentVoltage V 1.5 2.2 3 Vdc GS(Q) (V =50Vdc,I =150mAdc,MeasuredinFunctionalTest) DD D (2) Drain--SourceOn--Voltage V 0.15 Vdc DS(on) (V =10Vdc,I =2.7Adc) GS D (2) DynamicCharacteristics ReverseTransferCapacitance C 1.27 pF rss (V =50Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS OutputCapacitance C 86.7 pF oss (V =50Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS InputCapacitance C 539 pF iss (V =50Vdc,V =0Vdc 30mV(rms)ac 1MHz) DS GS (3) FunctionalTests (InFreescaleTestFixture,50ohm system)V =50Vdc,I =150mA,P =1000W Peak (100W Avg.), DD DQ out f=1030MHz,128 sec PulseWidth,10%Duty Cycle PowerGain G 19 20 22 dB ps DrainEfficiency 54 56 % D InputReturnLoss IRL --23 --9 dB 1. RefertoAN1955, ThermalMeasurement Methodology of RF Power Amplifiers. Goto