X-On Electronics has gained recognition as a prominent supplier of MMRF1007HR5 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. MMRF1007HR5 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

MMRF1007HR5 NXP

MMRF1007HR5 electronic component of NXP
MMRF1007HR5 NXP
MMRF1007HR5 RF MOSFET Transistors
MMRF1007HR5  Semiconductors

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Part No. MMRF1007HR5
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors MOSFET 965-1215 MHz 1000 W 50 V
Datasheet: MMRF1007HR5 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 758.7975 ea
Line Total: USD 758.8 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
   
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We are delighted to provide the MMRF1007HR5 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMRF1007HR5 and other electronic components in the RF MOSFET Transistors category and beyond.

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DocumentNumber:MMRF1007H FreescaleSemiconductor Rev. 0, 12/2013 TechnicalData RFPowerFieldEffectTransistors N--Channel Enhancement--ModeLateral MOSFETs MMRF1007HR5 RF power transistors designed for applications operating at frequencies MMRF1007HSR5 from900to1215MHz.Thesedevicesaresuitableforuseindefenseand commercialpulseapplications, suchas IFF andDME. TypicalPulsePerformance: V =50Vdc,I = 150mA, P = DD DQ out 1000W Peak (100W Avg.), f = 1030MHz, PulseWidth= 128 sec, Duty 965--1215MHz,1000W,50V Cycle= 10% LATERALN--CHANNEL Power Gain 20dB BROADBAND DrainEfficiency 56% RFPOWERMOSFETs Capableof Handling5:1VSWR, 50Vdc, 1030MHz, 1000W Peak Power Features CharacterizedwithSeries Equivalent Large--SignalImpedanceParameters Internally Matchedfor Easeof Use QualifiedUptoaMaximum of 50V Operation DD IntegratedESD Protection Designedfor Push--PullOperation NI--1230H--4S Greater NegativeGate--SourceVoltageRangefor ImprovedClass C MMRF1007HR5 Operation InTapeandReel. R5Suffix = 50Units, 56mm TapeWidth, 13--inchReel. NI--1230S--4S MMRF1007HSR5 PARTSAREPUSH--PULL RF /V31 RF /V inA GSA outA DSA RF /V42 RF /V inB GSB outB DSB (TopView) Figure1.PinConnections Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+110 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 150 C C (1) OperatingJunctionTemperature T 225 C J 1. Continuous useatmaximum temperaturewillaffectMTTF. FreescaleSemiconductor, Inc., 2013. All rights reserved. MMRF1007HR5MMRF1007HSR5 RF DeviceData FreescaleSemiconductor, Inc. 1Table2.ThermalCharacteristics (1) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase Z C/W JC CaseTemperature67C,1000W Peak,128 sec PulseWidth,10%Duty Cycle, 0.02 50Vdc,I =150mA DQ CaseTemperature62C,Mode--S PulseTrain,80Pulses of32 sec On,18 sec 0.07 Off,RepeatedEvery 40msec,6.4%OverallDuty Cycle,50Vdc,I =150mA DQ Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 1B MachineModel(perEIA/JESD22--A115) B ChargeDeviceModel(perJESD22--C101) IV Table4.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit (2) OffCharacteristics Gate--SourceLeakageCurrent I 10 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--SourceBreakdownVoltage V 110 Vdc (BR)DSS (V =0Vdc,I =165mA) GS D ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =50Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 100 Adc DSS (V =100Vdc,V =0Vdc) DS GS OnCharacteristics (2) GateThresholdVoltage V 0.9 1.6 2.4 Vdc GS(th) (V =10Vdc,I =1000 Adc) DS D (3) GateQuiescentVoltage V 1.5 2.2 3 Vdc GS(Q) (V =50Vdc,I =150mAdc,MeasuredinFunctionalTest) DD D (2) Drain--SourceOn--Voltage V 0.15 Vdc DS(on) (V =10Vdc,I =2.7Adc) GS D (2) DynamicCharacteristics ReverseTransferCapacitance C 1.27 pF rss (V =50Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS OutputCapacitance C 86.7 pF oss (V =50Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS InputCapacitance C 539 pF iss (V =50Vdc,V =0Vdc 30mV(rms)ac 1MHz) DS GS (3) FunctionalTests (InFreescaleTestFixture,50ohm system)V =50Vdc,I =150mA,P =1000W Peak (100W Avg.), DD DQ out f=1030MHz,128 sec PulseWidth,10%Duty Cycle PowerGain G 19 20 22 dB ps DrainEfficiency 54 56 % D InputReturnLoss IRL --23 --9 dB 1. RefertoAN1955, ThermalMeasurement Methodology of RF Power Amplifiers. Goto

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