X-On Electronics has gained recognition as a prominent supplier of MMRF1019NR4 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. MMRF1019NR4 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

MMRF1019NR4 NXP

MMRF1019NR4 electronic component of NXP
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Part No.MMRF1019NR4
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors Pulsed Lateral N-Channel RF Power MOSFET, 1090 MHz, 10 W, 50 V
Datasheet: MMRF1019NR4 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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We are delighted to provide the MMRF1019NR4 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMRF1019NR4 and other electronic components in the RF MOSFET Transistors category and beyond.

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Document Number: MMRF1019N Freescale Semiconductor Rev. 0, 7/2014 Technical Data RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET MMRF1019NR4 RF power transistor designed for pulse applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for aerospace and defense applications such as DME, IFF, and L--band radar. Typical Pulse Performance: V =50Vdc,I =10mA, P =10W DD DQ out Peak (2 W Avg.), f = 1090 MHz, Pulse Width = 100 sec, Duty Cycle = 20% Power Gain 25 dB 1090 MHz, 10 W, 50 V Drain Efficiency 69% PULSE Features RF POWER LDMOS TRANSISTOR Characterized with Series Equivalent Large--Signal Impedance Parameters Qualified Up to a Maximum of 50 V Operation DD Integrated ESD Protection Greater Negative Gate--Source Voltage Range for Improved Class C Operation In Tape and Reel. R4 Suffix = 100 Units, 16 mm Tape Width, 7--inch Reel. PLD--1.5 PLASTIC Gate Drain Note: The center pad on the backside of the package is the source terminal for the transistor. Figure 1. Pin Connections Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage V --0.5, +100 Vdc DSS Gate--Source Voltage V --6.0, +10 Vdc GS Storage Temperature Range T -- 65 to +150 C stg Case Operating Temperature T 150 C C Operating Junction Temperature T 200 C J Table 2. Thermal Characteristics (1,2) Characteristic Symbol Value Unit Thermal Resistance, Junction to Case Z 1.6 C/W JC Case Temperature 79C, 10 W Peak, 100 sec Pulse Width, 20% Duty Cycle 1. MTTF calculator available at Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1C Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) IV Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD22--A113, IPC/JEDEC J--STD--020 3 260 C Table 5. Electrical Characteristics (T =25 C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Off Characteristics Gate--Source Leakage Current I 10 Adc GSS (V =5 Vdc, V =0 Vdc) GS DS Drain--Source Breakdown Voltage V 110 Vdc (BR)DSS (V =0 Vdc, I =7 mA) GS D Zero Gate Voltage Drain Leakage Current I 50 Adc DSS (V =50 Vdc, V =0 Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 2.5 mA DSS (V = 100 Vdc, V =0 Vdc) DS GS On Characteristics Gate Threshold Voltage V 1 1.7 2.5 Vdc GS(th) (V =10 Vdc, I =36 Adc) DS D Gate Quiescent Voltage V 1.7 2.4 3.2 Vdc GS(Q) (V =50 Vdc, I = 10 mAdc, Measured in Functional Test) DD D Drain--Source On--Voltage V 0.2 Vdc DS(on) (V =10 Vdc, I =70 mAdc) GS D Dynamic Characteristics Reverse Transfer Capacitance C 0.1 pF rss (V =50 Vdc 30 mV(rms)ac 1 MHz, V =0 Vdc) DS GS Output Capacitance C 3.38 pF oss (V =50 Vdc 30 mV(rms)ac 1 MHz, V =0 Vdc) DS GS Input Capacitance C 9.55 pF iss (V =50 Vdc, V =0 Vdc 30 mV(rms)ac 1 MHz) DS GS Functional Tests (In Freescale Test Fixture, 50 ohm system) V =50 Vdc, I =10 mA, P = 10 W Peak (2 W Avg.), f = 1090 MHz, DD DQ out 100 sec Pulse Width, 20% Duty Cycle Power Gain G 23 25 28 dB ps Drain Efficiency 66 69 % D Input Return Loss IRL --12 --8 dB MMRF1019NR4 RF Device Data Freescale Semiconductor, Inc. 2

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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