Package Type: 440162 and 440161 PN: CGHV22200F and CGHV22200P CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Crees CGHV22200 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 - 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is input matched and supplied in a ceramic/ metal flange package. Typical Performance Over 1.8 - 2.2 GHz (T = 25C) of Demonstration Amplifier C Parameter 1.8 GHz 2.0 GHz 2.2 GHz Units Gain 47 dBm 16.6 19.2 18.1 dB ACLR 47 dBm -37.4 -37.4 -35.6 dBc Drain Efficiency 47 dBm 31.5 31.9 34.8 % Note: Measured in the CGHV22200-AMP amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping, PAR = 7.5 dB 0.01% Probability on CCDF. I = 1.0 A DS Features 1.8 - 2.2 GHz Operation 18 dB Gain -35 dBc ACLR at 50 W P AVE 31-35 % Efficiency at 50 W P AVE High Degree of DPD Correction Can be Applied Subject to change without notice. 1 www.cree.com/rf Rev 2.1 April 2018Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage V 125 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Storage Temperature T -65, +150 C STG 3 Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 32 mA 25C GMAX 1 Maximum Drain Current I 12 A 25C DMAX 2 Soldering Temperature T 245 C S Screw Torque 80 in-oz 3 Thermal Resistance, Junction to Case R 1.22 C/W 85C, P = 96 W JC DISS 4 Thermal Resistance, Junction to Case R 1.54 C/W 85C, P = 96 W JC DISS 5 Case Operating Temperature T -40, +150 C C Note: 1 Current limit for long term, reliable operation. 2 Refer to the Application Note on soldering at