DE150-101N09A RF Power MOSFET N-Channel Enhancement Mode Low Q and R g g V = 100 V DSS High dv/dt Nanosecond Switching I = 9.0 A D25 Ideal for Class C, D, & E Applications R 0.16 DS(on) Symbol Test Conditions Maximum Ratings P = 200 W DC T = 25C to 150C J V 100 V DSS T = 25C to 150C R = 1 M V J GS 100 V DGR Continuous V 20 V GS Transient V 30 V GSM T = 25C c I 9.0 A D25 T = 25C, pulse width limited by T c JM I 54 A DM T = 25C I c 14 A AR T = 25C c E 7.5 mJ AR I I , di/dt 100A/s, V V , S DM DD DSS 5.5 V/ns T 150C, R = 0.2 j G dv/dt I = 0 S >200 V/ns DRAIN P 200 W DC GATE T = 25C c P 80 W DHS Derate 4.4W/C above 25C T = 25C c P 3.5 W DAMB SG1 SG2 SD1 SD2 R 0.74 C/W thJC R 1.50 C/W thJHS Features Isolated Substrate Symbol Test Conditions Characteristic Values high isolation voltage (>2500V) T = 25C unless otherwise specified J min. typ. max. excellent thermal transfer Increased temperature and power V = 0 V, I = 3 ma GS D V 100 V DSS cycling capability V = V , I = 4 ma DS GS D V 2 2.8 V IXYS advanced low Q process GS(th) g Low gate charge and capacitances V = 20 V , V = 0 GS DC DS I 100 nA GSS easier to drive V = 0.8 V T = 25C DS DSS J I 25 faster switching DSS A V = 0 T = 125C GS J 250 A Low R DS(on) Very low insertion inductance (<2nH) V = 15 V, I = 0.5I R GS D D25 0.16 DS(on) No beryllium oxide (BeO) or other Pulse test, t 300S, duty cycle d 2% hazardous materials V = 15 V, I = 0.5I , pulse test DS D D25 g 2.5 3.0 S fs Advantages T -55 +175 C J Optimized for RF and high speed switching at frequencies to >100MHz T 175 C JM Easy to mountno insulators needed High power density T -55 +175 C stg 1.6mm(0.063 in) from case for 10 s T 300 C L Weight 2 g DE150-101N09A RF Power MOSFET Symbol Test Conditions Characteristic Values (T = 25C unless otherwise specified) min. typ. max. J R 5 G C 700 pF iss V = 0 V, V = 0.8 V , C GS DS DSS(max) 200 pF oss f = 1 MHz C 30 pF rss Back Metal to any Pin C 16 pF stray T 4 ns d(on) V = 15 V, V = 0.8 V T GS DS DSS 4 ns on I = 0.5 I D DM T R = 0.2 (External) 4 ns d(off) G T 4 ns off Q 22 nC g(on) V = 10 V, V = 0.5 V GS DS DSS Q 3.4 nC gs I = 0.5 I , Ig = 3 ma D D25 Q 9.1 nC gd Source-Drain Diode Characteristic Values (T = 25C unless otherwise specified) J Symbol Test Conditions min. typ. max. V = 0 V GS I 9.0 A S Repetitive pulse width limited by T I JM 54 A SM I = I , V = 0 V, F S GS V 1.5 V SD Pulse test, t 300 s, duty cycle 2% T 300 ns rr CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub- lished in this document at any time and without notice. For detailed device mounting and installation instructions, see the Device Installation & Mounting Instructions technical note on the IXYSRF web site at