Package Type: 440193 / 440206 PN: CGHV35150F / CGHV35150P CGHV35150 150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Crees CGHV35150 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150 ideal for 2.9 - 3.5 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange and pill package. Typical Performance 3.1 - 3.5 GHz (T = 85C) C Parameter 3.1 GHz 3.2 GHz 3.3 GHz 3.4 GHz 3.5 GHz Units Output Power 180 180 180 170 150 dB Gain 13.5 13.5 13.5 13.3 12.7 dBc Drain Efficiency 50 49 50 49 48 % Note: Measured in the CGHV35150-AMP application circuit, under 300 s pulse width, 20% duty cycle, P = 39 dBm IN Features: Rated Power = 150 W T = 85C CASE Operating Frequency = 2.9 - 3.5 GHz Transient 100 sec - 300 sec 20% Duty Cycle 13.5 dB Power Gain T = 85C CASE 50 % Typical Drain Efficiency T = 85C CASE Input Matched <0.3 dB Pulsed Amplitude Droop Subject to change without notice. 1 www.cree.com/rf Rev 1.0 May 2015Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Pulse Width PW 300 s Duty Cycle DC 20 % Drain-Source Voltage V 125 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 30 mA 25C GMAX 1 Maximum Drain Current I 12 A 25C DMAX 2 Soldering Temperature T 245 C S Screw Torque 40 in-oz 3 Pulsed Thermal Resistance, Junction to Case R 0.81 C/W 300 sec, 20%, 85C JC 4 Pulsed Thermal Resistance, Junction to Case R 0.86 C/W 300 sec, 20%, 85C JC Case Operating Temperature T -40, +150 C 30 seconds C Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at