X-On Electronics has gained recognition as a prominent supplier of CGHV35150F RF JFET Transistors across the USA, India, Europe, Australia, and various other global locations. CGHV35150F RF JFET Transistors are a product manufactured by Wolfspeed. We provide cost-effective solutions for RF JFET Transistors, ensuring timely deliveries around the world.

CGHV35150F Wolfspeed

CGHV35150F electronic component of Wolfspeed
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Part No.CGHV35150F
Manufacturer: Wolfspeed
Category: RF JFET Transistors
Description: RF JFET Transistors 2.9-3.5GHz 150W GaN Gain@3.1Ghz 13.3dB
Datasheet: CGHV35150F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 527.516 ea
Line Total: USD 527.52 
Availability - 3
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 527.516
60 : USD 495.44
100 : USD 495.429
260 : USD 495.418
500 : USD 495.407
2500 : USD 495.319

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Operating Frequency
Gain
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Output Power
Maximum Drain Gate Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Application
Configuration
Height
Length
Operating Temperature Range
Product
Type
Width
Brand
Forward Transconductance - Min
Gate-Source Cutoff Voltage
Class
Development Kit
Fall Time
Nf - Noise Figure
P1db - Compression Point
Rds On - Drain-Source Resistance
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Vgs Th - Gate-Source Threshold Voltage
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CGHV35150F from our RF JFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CGHV35150F and other electronic components in the RF JFET Transistors category and beyond.

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Package Type: 440193 / 440206 PN: CGHV35150F / CGHV35150P CGHV35150 150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Crees CGHV35150 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150 ideal for 2.9 - 3.5 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange and pill package. Typical Performance 3.1 - 3.5 GHz (T = 85C) C Parameter 3.1 GHz 3.2 GHz 3.3 GHz 3.4 GHz 3.5 GHz Units Output Power 180 180 180 170 150 dB Gain 13.5 13.5 13.5 13.3 12.7 dBc Drain Efficiency 50 49 50 49 48 % Note: Measured in the CGHV35150-AMP application circuit, under 300 s pulse width, 20% duty cycle, P = 39 dBm IN Features: Rated Power = 150 W T = 85C CASE Operating Frequency = 2.9 - 3.5 GHz Transient 100 sec - 300 sec 20% Duty Cycle 13.5 dB Power Gain T = 85C CASE 50 % Typical Drain Efficiency T = 85C CASE Input Matched <0.3 dB Pulsed Amplitude Droop Subject to change without notice. 1 www.cree.com/rf Rev 1.0 May 2015Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Pulse Width PW 300 s Duty Cycle DC 20 % Drain-Source Voltage V 125 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 30 mA 25C GMAX 1 Maximum Drain Current I 12 A 25C DMAX 2 Soldering Temperature T 245 C S Screw Torque 40 in-oz 3 Pulsed Thermal Resistance, Junction to Case R 0.81 C/W 300 sec, 20%, 85C JC 4 Pulsed Thermal Resistance, Junction to Case R 0.86 C/W 300 sec, 20%, 85C JC Case Operating Temperature T -40, +150 C 30 seconds C Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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