TGF2022-06 Qorvo

Advance Product Information September 19, 2005 DC - 20 GHz Discrete power pHEMT TGF2022-06 Key Features and Performance Frequency Range: DC - 20 GHz > 28 dBm Nominal Psat 58% Maximum PAE 36 dBm Nominal OIP3 13 dB Nominal Power Gain Suitable for high reliability applications 0.6mm x 0.35 m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 45-75mA (Under RF Drive, Id rises from 45mA to 150mA) Product Description Chip Dimensions: 0.57 x 0.53 x 0.10 mm (0.022 x 0.021 x 0.004 in) The TriQuint TGF2022-06 is a discrete Primary Applications 0.6 mm pHEMT which operates from Point-to-point Radio DC-20 GHz. The TGF2022-06 is High-reliability space designed using TriQuints proven standard 0.35um power pHEMT Military production process. Base Stations Broadband Wireless Applications The TGF2022-06 typically provides > 28 dBm of saturated output power with power gain of 13 dB. The maximum power added efficiency is 58% which 35 makes the TGF2022-06 appropriate for 30 high efficiency applications. 25 MSG The TGF2022-06 is also ideally suited for 20 Point-to-point Radio, High-reliability MAG 15 space, and Military applications. 10 The TGF2022-06 has a protective 5 surface passivation layer providing environmental robustness. 0 02 46 8 10 12 14 16 Frequency (GHz) Lead-free and RoHS compliant Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice. 1 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw tqs.com Web: www.triquint.com Maximum Gain (dB)Advance Product Information September 19, 2005 TABLE I TGF2022-06 MAXIMUM RATINGS Symbol Parameter 1/ Value Notes + V Positive Supply Voltage 12.5 V 2/ - V Negative Supply Voltage Range -5V to 0V + I Positive Supply Current 282 mA 2/ I Gate Supply Current 7 mA G P Input Continuous Wave Power 23 dBm 2/ IN P Power Dissipation See note 3 2/ 3/ D T Operating Channel Temperature 150 C 4/ CH T Mounting Temperature (30 Seconds) 320 C M T Storage Temperature -65 to 150 C STG 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed P . D 3/ For a median life time of 1E+6 hrs, Power dissipation is limited to: P (max) = (150 C TBASE C) / 138.0 (C/W) D 4/ Junction operating temperature will directly affect the device median time to failure (T ). For maximum life, it is recommended that junction temperatures be maintained M at the lowest possible levels. TABLE II DC PROBE CHARACTERISTICS (T = 25 qC, Nominal) A Symbol Parameter Minimum Typical Maximum Unit Idss Saturated Drain Current - 180 - mA Gm Transconductance - 225 - mS V Pinch-off Voltage -1.5 -1 -0.5 V P V Breakdown Voltage -30 - -14 V BGS Gate-Source V Breakdown Voltage -30 - -14 V BGD Gate-Drain Note: For TriQuints 0.35um power pHEMT devices, RF breakdown >> DC breakdown 2 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw tqs.com Web: www.triquint.com