TGF2023-2-05 Qorvo

TGF2023-2-05 25 Watt Discrete Power GaN on SiC HEMT Applications Defense & Aerospace Broadband Wireless Product Features Functional Block Diagram Frequency Range: DC - 18 GHz 44.3 dBm Nominal P at 6 GHz SAT 64.4% Maximum PAE at 6 GHz 17.6 dB Linear Gain at 6 GHz Bias: VD = 12 - 32 V, IDQ = 100 - 250 mA Technology: QGaN25 on SiC Chip Dimensions: 0.82 x 1.44 x 0.10 mm General Description Pad Configuration The Qorvo TGF2023-2-05 is a discrete 5 mm GaN on Pad No. Symbol SiC HEMT which operates from DC-18 GHz. The 1-4 VG / RF IN TGF2023-2-05 is designed using Qorvos proven 5 V / RF OUT D QGaN25 production process. This process features Backside Source / Ground advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2023-2-05 typically provides 44.3 dBm of saturated output power with power gain of 14.6 dB at 6 GHz. The maximum power added efficiency is 64.4 % which makes the TGF2023-2-05 appropriate for high Ordering Information efficiency applications. Part ECCN Description Lead-free and RoHS compliant TGF2023-2-05 3A001b.3.b 25 Watt GaN HEMT Datasheet: Rev D 01-22-16 Disclaimer: Subject to change without notice - 1 of 22 - 2016 Qorvo www.qorvo.com TGF2023-2-05 25 Watt Discrete Power GaN on SiC HEMT (1) Absolute Maximum Ratings Recommended Operating Conditions Parameter Value Parameter Value Drain to Gate Voltage (V ) 100 V Drain Voltage Range (V ) 12 - 40 V DG D Gate Voltage Range (VG) 10 to 0 V Drain Quiescent Current (IDQ) 250 mA 2 Drain Current (ID) 5 A Drain Current Under RF Drive ( ID) 0.5 A (Typ.) Gate Current (I ) 5 to 14 mA Gate Voltage (V ) 3.0 V (Typ.) G G Power Dissipation, CW (P ) See graph on pg.5. Channel Temperature (T ) 225C (Max.) D CH CW Input Power (P ) +37 dBm Dissipation Power, CW (P ) 16 W IN D 2,3 Channel Temperature (T ) 275C Dissipation Power, Pulsed (P ) 17.5 W CH D Mounting Temperature 320 C 1. Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating (30 Seconds) Storage Temperature 65 to 150C conditions. Operation of this device outside the parameter ranges given above 2. 2.66 mS Pulse Width, 10% Duty Cycle may cause permanent damage. These are stress ratings only, and 3. Carrier plate temperature is at 85 C. functional operation of the device at these conditions is not implied. Model RF Characterization Optimum Power Tune Simulation conditions: T = 25C, Signal Duty Cycle = 10% Parameter Typical Value Units Frequency (F) 3 6 8 10 GHz Drain Voltage (VD) 28 28 28 28 28 28 28 28 V Bias Current (IDQ) 100 250 100 250 100 250 100 250 mA Output P3dB (P3dB) 44.2 44.1 44.4 44.3 44.4 44.3 44.4 44.3 dBm PAE P3dB (PAE3dB) 61.7 60.9 60 59.2 57.4 57.5 55.3 55.4 % Gain P3dB (G3dB) 19.1 20 13.8 14.6 11.5 12.2 9.7 10.4 dB (1) Parallel Resistance (Rp) 63.5 63.6 61.4 60.6 57.9 58 53.1 52.6 mm (1) Parallel Capacitance (Cp) 0.268 0.275 0.297 0.303 0.297 0.303 0.320 0.325 pF/mm (2) Load Reflection Coefficient (L) 0.4417 0.4417 0.4637 0.4537 0.4648 0.4649 0.4762 0.4763 -- Notes: 1. Large signal equivalent output network (normalized). 2. Characteristic Impedance (Zo) = 5 . Model RF Characterization Optimum Efficiency Tune Simulation conditions: T = 25C, Signal Duty Cycle = 10% Parameter Typical Value Units Frequency (F) 3 6 8 10 GHz Drain Voltage (VD) 28 28 28 28 28 28 28 28 V Bias Current (IDQ) 100 250 100 250 100 250 100 250 mA Output P3dB (P3dB) 42.7 42.7 43.1 43.1 43.1 43.1 43.3 43.3 dBm PAE P3dB (PAE3dB) 67.1 65.9 65.1 64.4 63 62.7 60.3 60.4 % Gain P3dB (G3dB) 20.8 21.5 15.2 15.8 12.8 13.3 10.8 11.5 dB (1) Parallel Resistance (Rp) 115 112 103 98.6 98.9 93.9 84.5 82.7 mm (1) Parallel Capacitance (Cp) 0.347 0.340 0.361 0.359 0.368 0.369 0.368 0.373 pF/mm (2) Load Reflection Coefficient (L) 0.6519 0.6419 0.6440 0.6340 0.6648 0.6452 0.6463 0.6464 -- Notes: 1. Large signal equivalent output network (normalized). 2. Characteristic Impedance (Zo) = 5 . Datasheet: Rev D 01-22-16 Disclaimer: Subject to change without notice - 2 of 22 - 2016 Qorvo www.qorvo.com