TGF2965-SM 5 W, 32 V, 0.033 GHz, GaN RF Input-Matched Transistor General Description The Qorvo TGF2965-SM is a 6 W (P ), 50 -input 3dB matched discrete GaN on SiC HEMT which operates from 0.03 to 3.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in an industry-standard 3 x 3 mm surface mount QFN package. Product Features Lead-free and ROHS compliant Frequency: 0.03 to 3.0 GHz 1 Output Power (P ) : 6.0 W 3dB Evaluation boards are available upon request. 1 Linear Gain : 18 dB 1 Typical DEFF : 65% 3dB Operating Voltage: 32 V Functional Block Diagram Low thermal resistance package CW and Pulse capable 3 x 3 mm package 1 At 2 GHz Applications 1 12 Military Radar Civilian Radar 2 11 Land Mobile and Military Radio Communications Input MN Test Instrumentation 3 10 Wideband and Narrowband Amplifiers Jammers 4 9 Ordering Information Part Description 1123170 TGF2965-SM 100 pc MOQ 1123185 TGF2965-SM EVB TGF2965-SMTR13 TGF2965-SM Tape/Reel 2500 pc MOQ Data Sheet Rev. B, May 2019 Subject to change without notice 1 of 21 www.qorvo.com 5 16 6 15 7 14 8 13 TGF2965-SM 5 W, 32 V, 0.033 GHz, GaN RF Input-Matched Transistor Recommended Operating Conditions Absolute Maximum Ratings 1 Parameter Value/Range Parameter Value/Range Drain Voltage (V ) 32 V (Typ.) Breakdown Voltage (BV ) 100 V min. D DG Drain Quiescent Current (I ) 25 mA (Typ.) Gate Voltage Range (V ) -7 to +2 V DQ G Peak Drain Current ( I ) 326 mA (Typ.) Drain Current (I ) 0.6 A D D Gate Voltage (VG) -2.7 V (Typ.) Gate Current (I ) See page 4. G Power Dissipation, CW (PD) 7.05 W (Max) Power Dissipation (PD) 7.5 W 2 Power Dissipation, Pulse (PD) 9.1 W (Max) RF Input Power, CW, T = 25 C (PIN) 30 dBm 1 Electrical specifications are measured at specified test Operation of this device outside the parameter ranges given conditions. Specifications are not guaranteed over all above may cause permanent damage. These are stress ratings recommended operating conditions. only, and functional operation of the device at these conditions is not implied. 2 100uS Pulse Width, 20% Duty Cycle RF CharacterizationLoad Pull Performance Test conditions unless otherwise noted: T = 25 C, V = 32 V, I = 30 mA, Pulse: 100 uS Pulse Width, 20% Duty Cycle A D DQ Symbol Parameter Typical Units F Frequency 1 1.5 2 2.5 3 GHz GLIN Linear Gain, Power Tuned 17.3 17.4 18.2 17.8 16.9 dB P Output Power at 3 dB Gain Compression, Power Tuned 37.8 37.7 37.8 38.1 38.3 dBm 3dB Drain Efficiency at 3 dB Gain Compression, DEFF 76.0 62.7 65.2 65.4 71.9 % 3dB Efficiency Tuned G3dB Gain at 3 dB Compression, Power Tuned 14.3 14.4 15.2 14.8 13.9 dB RF Characterization0.033 GHz EVB Performance at 2.5 GHzPulsed Test conditions unless otherwise noted: T = 25 C, V = 32 V, I = 30 mA, Pulse: 100 uS Pulse Width, 20% Duty Cycle A D DQ Symbol Parameter Min Typical Max Units GLIN Linear Gain 17.1 dB P3dB Output Power at 3 dB Gain Compression 5.0 W DE Drain Efficiency at 3 dB Gain Compression 50.6 % 3dB G3dB Gain at 3 dB Compression 14.1 dB RF CharacterizationMismatch Ruggedness at 1, 2 and 3 GHz Test conditions unless otherwise noted: T = 25 C, V = 28 V, I = 30 mA, Pulse: 100 uS Pulse Width, 20% Duty Cycle A D DQ Driving input power is determined at pulsed compression under matched condition at EVB output connector. Typical Symbol Parameter dB Compression VSWR Impedance Mismatch Ruggedness 3 10:1 VSWR Impedance Mismatch Ruggedness 8 2:1 Data Sheet Rev. B, May 2019 Subject to change without notice 2 of 21 www.qorvo.com