TGF3021-SM 30 W, 32 V, 0.03 to 4 GHz, GaN RF Transistor Product Overview The TGF3021-SM is a 30 W (P ) discrete GaN on SiC 1dB HEMT which operates from 0.03 to 4.0 GHz. The device is constructed with proven TQGaN25 processes, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. The device is housed in an industry-standard 3 x 4 mm surface mount QFN package. Lead-free and ROHS compliant Evaluation boards are available upon request. Key Features Functional Block Diagram Frequency: 0.03 to 4.0 GHz Output Power (P1dB): 36.0 W at 2 GHz Linear Gain: 19.3 dB at 2 GHz 20 19 18 17 Typical PAE1dB: 72.7% at 2 GHz Operating Voltage: 32 V 1 16 Low thermal resistance package 2 15 CW and Pulse capable 3 14 3 x 4 mm package 4 13 5 12 6 11 7 8 9 10 Applications Military radar Civilian radar Land mobile and military radio communications Pad Configuration Test instrumentation Wideband and narrowband amplifiers Pad No. Symbol Jammers 11 - 16 V / RF OUT D 1 - 6 V / RF IN G 7 10, 20 - 17 NC Ordering Information Back side Source Part Number Description TGF3021-SM QFN Packaged Part TGF3021-SM-EVB1 0.05 0.55 GHz EVB Data Sheet Rev. C, June 12, 2020 Subject to change without notice 1 of 31 www.qorvo.com TGF3021-SM 30 W, 32 V, 0.03 to 4 GHz, GaN RF Transistor Recommended Operating Conditions Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Value Units Drain to Gate Voltage (VDG) 100 V Drain Voltage Range (VD) 32 (Typ.) V Gate Voltage Range (VG) 7 to 2 V Drain Quiescent Current (IDQ) 65 mA Drain Current (ID) 5.8 A Peak Drain Current (ID) 1800 (Typ.) mA Gate Current (I ) 7.5 to 16.8 mA Gate Voltage (V ) 2.7 (Typ.) V G G Electrical specifications are measured at specified test conditions. CW RF Input Power (P ) See page 8. IN Specifications are not guaranteed over all recommended operating Storage Temperature 40 to 150C conditions. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Data Sheet Rev. C, June 12, 2020 Subject to change without notice 2 of 31 www.qorvo.com