BF1005S... Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages up to 1 GHz Operating voltage 5 V Integrated biasing network 1) Pb-free (RoHS compliant) package Qualified according AEC Q101 Drain RF Output G2 + DC AGC G1 RF Input GND ESD (Electrostatic discharge) sensitive device, observe handling precaution Type Package Pin Configuration Marking BF1005S SOT143 1=S 2=D 3=G2 4=G1 - - NZs BF1005SR SOT143R 1=D 2=S 3=G1 4=G2 - - NZs Maximum Ratings Parameter Symbol Value Unit 8 V Drain-source voltage V DS 25 mA Continuous drain current I D 10 Gate 1/ gate 2-source current I G1/2SM 3 V Gate 1 (external biasing) +V G1SE 200 mW Total power dissipation P tot T 76 C S C Storage temperature T -55 ... 150 stg 150 Channel temperature T ch 1 Pb-containing package may be available upon special request Note: It is not recommended to apply external DC-voltage on Gate 1 in active mode. 1 2007-04-20BF1005S... Thermal Resistance Parameter Symbol Value Unit 1) K/W Channel - soldering point R 370 thchs Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 12 - - V Drain-source breakdown voltage V (BR)DS I = 650 A, V = 0 , V = 0 D G1S G2S 8 - 12 Gate1-source breakdown voltage +V (BR)G1SS +I = 10 mA, V = 0 , V = 0 G1S G2S DS 8 - 13 Gate2 source breakdown voltage V (BR)G2SS I = 10 mA, V = 0 , V = 0 G2S G1S DS - 100 - A Gate1-source leakage current +I G1SS V = 6 V, V = 0 G1S G2S - - 50 nA Gate 2 source leakage current I G2SS V = 8 V, V = 0 , V = 0 G2S G1S DS - - 800 A Drain current I DSS V = 5 V, V = 0 , V = 4 V DS G1S G2S 8 13 16 mA Operating current (selfbiased) I DSO V = 5 V, V = 4 V DS G2S Gate2-source pinch-off voltage V - 1 - V G2S(p) V = 5 V, I = 100 A DS D 1 For calculation of R please refer to Application Note Thermal Resistance thJA 2 2007-04-20