X-On Electronics has gained recognition as a prominent supplier of BF 1005S E6327 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. BF 1005S E6327 RF MOSFET Transistors are a product manufactured by Infineon. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

BF 1005S E6327 Infineon

BF 1005S E6327 electronic component of Infineon
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See Product Specifications
Part No.BF 1005S E6327
Manufacturer: Infineon
Category: RF MOSFET Transistors
Description: Transistors RF MOSFET Silicon N-Channel MOSFET Tetrode
Datasheet: BF 1005S E6327 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 5000
Multiples : 5000
5000 : USD 0.0841
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.5805
10 : USD 0.4734
100 : USD 0.2545
500 : USD 0.1651
1000 : USD 0.1373
3000 : USD 0.1184
9000 : USD 0.1114
24000 : USD 0.1079
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Gain
Output Power
Configuration
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Series
Transistor Type
Type
Brand
Forward Transconductance - Min
Product Type
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
Height
Length
Width
Cnhts
Hts Code
Mxhts
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BF 1005S E6327 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BF 1005S E6327 and other electronic components in the RF MOSFET Transistors category and beyond.

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BF1005S... Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages up to 1 GHz Operating voltage 5 V Integrated biasing network 1) Pb-free (RoHS compliant) package Qualified according AEC Q101 Drain RF Output G2 + DC AGC G1 RF Input GND ESD (Electrostatic discharge) sensitive device, observe handling precaution Type Package Pin Configuration Marking BF1005S SOT143 1=S 2=D 3=G2 4=G1 - - NZs BF1005SR SOT143R 1=D 2=S 3=G1 4=G2 - - NZs Maximum Ratings Parameter Symbol Value Unit 8 V Drain-source voltage V DS 25 mA Continuous drain current I D 10 Gate 1/ gate 2-source current I G1/2SM 3 V Gate 1 (external biasing) +V G1SE 200 mW Total power dissipation P tot T 76 C S C Storage temperature T -55 ... 150 stg 150 Channel temperature T ch 1 Pb-containing package may be available upon special request Note: It is not recommended to apply external DC-voltage on Gate 1 in active mode. 1 2007-04-20BF1005S... Thermal Resistance Parameter Symbol Value Unit 1) K/W Channel - soldering point R 370 thchs Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 12 - - V Drain-source breakdown voltage V (BR)DS I = 650 A, V = 0 , V = 0 D G1S G2S 8 - 12 Gate1-source breakdown voltage +V (BR)G1SS +I = 10 mA, V = 0 , V = 0 G1S G2S DS 8 - 13 Gate2 source breakdown voltage V (BR)G2SS I = 10 mA, V = 0 , V = 0 G2S G1S DS - 100 - A Gate1-source leakage current +I G1SS V = 6 V, V = 0 G1S G2S - - 50 nA Gate 2 source leakage current I G2SS V = 8 V, V = 0 , V = 0 G2S G1S DS - - 800 A Drain current I DSS V = 5 V, V = 0 , V = 4 V DS G1S G2S 8 13 16 mA Operating current (selfbiased) I DSO V = 5 V, V = 4 V DS G2S Gate2-source pinch-off voltage V - 1 - V G2S(p) V = 5 V, I = 100 A DS D 1 For calculation of R please refer to Application Note Thermal Resistance thJA 2 2007-04-20

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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