DocumentNumber:MD7IC2755N FreescaleSemiconductor Rev. 3, 9/2010 TechnicalData RFLDMOSWidebandIntegrated MD7IC2755NR1 PowerAmplifiers The MD7IC2755N wideband integrated circuit is designed with on--chip MD7IC2755GNR1 matchingthatmakesitusablefrom2500--2700MHz.Thismulti--stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulations. TypicalDoherty WiMAX Performance: V =28Volts,I =I = DD DQ1A DQ1B 2500--2700MHz,10WAVG.,28V 80mA, I = 275mA, V =1.7Vdc,P = 10Watts Avg., DQ2B G2A out 3 WiMAX f = 2700MHz, OFDM 802.16d, 64QAM / , 4Bursts, 10MHz Channel 4 RFLDMOSWIDEBAND Bandwidth, Input SignalPAR = 9.5dB 0.01%Probability onCCDF. INTEGRATEDPOWERAMPLIFIERS Power Gain 25dB Power AddedEfficiency 25% DeviceOutput SignalPAR 8.5dB 0.01%Probability onCCDF ACPR 8.5MHz Offset --37dBc in1MHz ChannelBandwidth CASE1618--02 Capableof Handling10:1VSWR, 32Vdc, 2600MHz, 90Watts CW TO--270WB--14 Output Power (3dB Input Overdrivefrom RatedP ) out PLASTIC Stableintoa10:1VSWR. AllSpurs Below --60dBc 100mW to10Watts MD7IC2755NR1 CW P out Typical P 1dB CompressionPoint 30Watts CW out Features CASE1621--02 ProductionTestedinaSymmetricalDoherty Configuration TO--270WB--14GULL 100%PAR Testedfor GuaranteedOutput Power Capability PLASTIC CharacterizedwithSeries Equivalent Large--SignalImpedanceParameters MD7IC2755GNR1 andCommonSourceS--Parameters On--ChipMatching(50Ohm Input, DC Blocked) IntegratedQuiescent Current TemperatureCompensationwith (1) Enable/DisableFunction IntegratedESD Protection 225C CapablePlastic Package RoHSCompliant InTapeandReel. R1Suffix = 500Units per 44mm, 13inchReel. V DS1A V 1 DS1A (2) PEAKING V 2 GS2A 14 V 3 RF RF /V GS1A inA out1 DS2A RF /V out1 DS2A RF 4 inA NC 5 NC 6 V GS1A QuiescentCurrent NC 7 (1) V TemperatureCompensation GS2A NC 8 RF 9 13 RF /V inB out2 DS2B V GS1B QuiescentCurrent V 10 GS1B (1) V TemperatureCompensation V 11 GS2B GS2B V 12 (2) DS1B CARRIER RF (TopView) inB RF /V out2 DS2B Note: Exposed backside of the package is V DS1B thesourceterminalforthetransistors. Figure1.FunctionalBlockDiagram Figure2.PinConnections 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current ControlfortheRFIntegratedCircuitDeviceFamily.GotoTable1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+65 Vdc DS Gate--SourceVoltage V --0.5,+10 Vdc GS OperatingVoltage V 32,+0 Vdc DD StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 150 C C (1,2) OperatingJunctionTemperature T 225 C J InputPower P 30 dBm in Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit FinalDohertyApplication ThermalResistance,JunctiontoCase R C/W JC CaseTemperature72C,P =10W CW,2600MHz out Stage1A,1B,28Vdc,I =I =80mA 2.6 DQ1A DQ1B Stage2A,2B,28Vdc,I =275mA,V =1.7Vdc 1.8 DQ2B G2A CaseTemperature90C,P =55W CW,2600MHz out Stage1A,1B,28Vdc,I =I =80mA 2.3 DQ1A DQ1B Stage2A,2B,28Vdc,I =275mA,V =1.7Vdc 1.1 DQ2B G2A Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 1C(Minimum) MachineModel(perEIA/JESD22--A115) A (Minimum) ChargeDeviceModel(perJESD22--C101) III (Minimum) Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableat