BF1204,115 NXP

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BF1204 Dual N-channel dual gate MOS-FET Product specification 2010 Sep 16 Supersedes data of 2001 Apr 25NXP Semiconductors Product specification Dual N-channel dual gate MOS-FET BF1204 FEATURES PINNING - SOT363 Two low noise gain controlled amplifiers in a single PIN DESCRIPTION package 1gate1(a) Superior cross-modulation performance during AGC 2gate2 High forward transfer admittance 3gate1(b) High forward transfer admittance to input capacitance 4 drain (b) ratio. 5 source 6 drain (a) APPLICATIONS Gain controlled low noise amplifiers for VHF and UHF applications with 3 to 9 V supply voltage, such as digital handbook, halfpage d (a) s d (b) and analog television tuners and professional 6 5 4 communications equipment. AMP AMP DESCRIPTION a b The BF1204 is a combination of two equal dual gate MOS-FET amplifiers with shared source and gate 2 leads. 132 g1 (a) g2 g1 (b) The source and substrate are interconnected. Internal bias Top view MBL252 circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated Marking code: L3* * = - : made in Hong Kong * = p : made in Hong Kong diodes between the gates and source protect against * = t : made in Malaysia excessive input voltage surges. The transistor has a SOT363 micro-miniature plastic package. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per MOS-FET unless otherwise specified V drain-source voltage 10 V DS I drain current (DC) 30 mA D P total power dissipation T 102 C note 1 200 mW tot s y forward transfer admittance I =12mA f=1MHz 25 30 40 mS fs D C input capacitance at gate 1 I =12mA f=1MHz 1.7 2.2 pF ig1-s D C reverse transfer capacitance f = 1 MHz 15 fF rss NF noise figure f = 800 MHz 1.1 1.8 dB X cross-modulation input level for k = 1% at 40 dB AGC 100 105 dB V mod T operating junction temperature 150 C j Note 1. T is the temperature at the soldering point of the source lead. s CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. 2010 Sep 16 2