BF908,215 NXP

BF908 BF908R Dual-gate MOS-FETs Rev. 03 14 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. NXP Semiconductors Product specication Dual-gate MOS-FETs BF908 BF908R FEATURES High forward transfer admittance handbook, halfpage d 43 Short channel transistor with high forward transfer admittance to input capacitance ratio g 2 Low noise gain controlled amplifier up to 1 GHz. g 1 APPLICATIONS VHF and UHF applications with 12 V supply voltage, 1 2 such as television tuners and professional s,b communications equipment. Top view MAM039 BF908 marking code: %M1. DESCRIPTION Fig.1 Simplified outline (SOT143) and Depletion type field-effect transistor in a plastic symbol BF908. microminiature SOT143 or SOT143R package. The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. d handbook, halfpage 34 CAUTION The device is supplied in an antistatic package. The g 2 gate-source input must be protected against static g 1 discharge during transport or handling. PINNING 2 1 s,b PIN SYMBOL DESCRIPTION Top view MAM040 1 s, b source BF908R marking code: %M2. 2 d drain Fig.2 Simplified outline (SOT143R) and 3g gate 2 2 symbol BF908R. 4g gate 1 1 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V drain-source voltage -- 12 V DS I drain current -- 40 mA D P total power dissipation -- 200 mW tot T operating junction temperature -- 150 C j y forward transfer admittance 36 43 50 mS fs C input capacitance at gate 1 2.4 3.1 4 pF ig1-s C reverse transfer capacitance f = 1 MHz 20 30 45 pF rs F noise gure f = 800 MHz - 1.5 2.5 dB Rev. 03 - 14 November 2007 2 of 9