BLF184XRU NXP

BLF184XR BLF184XRS Power LDMOS transistor Rev. 4 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1. Application information Test signal f V P G DS L p D (MHz) (V) (W) (dB) (%) pulsed RF 108 50 700 23.9 73.5 CW 108 50 750 23.5 81.9 1.2 Features and benefits Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (HF to 600 MHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Industrial, scientific and medical applications Broadcast transmitter applicationsBLF184XR BLF184XRS Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF184XR (SOT1214A) 1drain1 1 1 2 2drain2 3gate1 5 3 34 4gate2 5 4 1 5source 2 sym117 BLF184XRS (SOT1214B) 1drain1 1 2 1 2drain2 3gate1 3 34 5 4gate2 5 4 1 5source 2 sym117 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF184XR - flanged ceramic package 2 mounting holes 4 leads SOT1214A BLF184XRS - earless flanged ceramic package 4 leads SOT1214B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 135 V DS V gate-source voltage 6+11 V GS T storage temperature 65 +150 C stg 1 T junction temperature - 225 C j 1 Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF calculator. BLF184XR BLF184XRS 4 All information provided in this document is subject to legal disclaimers. Ampleon B.V. 2015. All rights reserved. Product data sheet Rev. 4 1 September 2015 2 of 15