BLF245,112 NXP

BLF245 VHF power MOS transistor Rev. 5 1 September 2015 Product data sheet IMPORTANT NOTICE Dear customer, As of December 7th, 2015 BL RF Power of NXP Semiconductors will operate as an independent company under the new trade name Ampleon, which will be used in future data sheets together with new contact details. In data sheets, where the previous Philips references is mentioned, please use the new links as shown below. Philips Semiconductors Product specication VHF power MOS transistor BLF245 FEATURES PIN CONFIGURATION High power gain lfpage Low noise figure 1 4 Easy power control Good thermal stability d Withstands full load mismatch. g s MBB072 DESCRIPTION Silicon N-channel enhancement 23 mode vertical D-MOS transistor MSB057 designed for large signal amplifier applications in the VHF frequency Fig.1 Simplified outline and symbol. range. The transistor is encapsulated in a 4-lead SOT123A flange package, CAUTION with a ceramic cap. All leads are isolated from the flange. This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, Matched gate-source voltage (V ) GS refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. groups are available on request. PINNING - SOT123A WARNING PIN DESCRIPTION Product and environmental safety - toxic materials 1 drain This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of 2 source this product should be aware of its nature and of the necessary safety 3 gate precautions. After use, dispose of as chemical or special waste according to 4 source the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at T = 25 C in a class-B test circuit. h f V P G DS L p D MODE OF OPERATION (MHz) (V) (W) (dB) (%) CW, class-B 175 28 30 >13 >50 2003 Sep 02 2