BLF246,112 NXP

BLF246 VHF power MOS transistor Rev. 5 1 September 2015 Product data sheet IMPORTANT NOTICE Dear customer, As of December 7th, 2015 BL RF Power of NXP Semiconductors will operate as an independent company under the new trade name Ampleon, which will be used in future data sheets together with new contact details. In data sheets, where the previous Philips references is mentioned, please use the new links as shown below. Philips Semiconductors Product specication VHF power MOS transistor BLF246 FEATURES PINNING - SOT121B High power gain PIN DESCRIPTION Low noise figure 1 drain Easy power control 2 source Good thermal stability 3 gate Withstands full load mismatch. 4 source APPLICATIONS Large signal amplifier applications in the VHF frequency range. handbook, halfpage 14 DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B flange package with a ceramic cap. All leads are isolated from the d flange. A marking code, showing gate-source voltage g s (V ) information is provided for matched pair GS applications. Refer to the General section of the handbook for further information. 2 3 MAM267 CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and Fig.1 Simplified outline and symbol. SNW-FQ-302B. QUICK REFERENCE DATA RF performance at T =25 C in a common source test circuit. h f V P G DS L p D MODE OF OPERATION (MHz) (V) (W) (dB) (%) CW, class-B 108 28 80 16 55 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 2003 Aug 05 2