X-On Electronics has gained recognition as a prominent supplier of BLF3G21-30,112 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. BLF3G21-30,112 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

BLF3G21-30,112 NXP

BLF3G21-30,112 electronic component of NXP
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Part No.BLF3G21-30,112
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors LDMOS TNS
Datasheet: BLF3G21-30,112 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 62.0334 ea
Line Total: USD 62.03 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 62.0334
2 : USD 61.0155
5 : USD 59.3424
10 : USD 58.4298

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Transistor Type
Brand
Product Type
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BLF3G21-30,112 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BLF3G21-30,112 and other electronic components in the RF MOSFET Transistors category and beyond.

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BLF3G21-30 UHF power LDMOS transistor Rev. 2 1 September 2015 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz. Table 1. Typical class-AB RF performance I = 450 mA T = 25 C in a common source test circuit. Dq h Mode of operation f P G IMD3 P L p D L(1dB) (MHz) (W) (dB) (%) (dB) (W) CW 2000 36 12.5 43 - 36 Two-tone 2000 30 13.5 35 26 - 0.1 to 10 13.8 - < 50 - Table 2. Typical class-A RF performance I = 1 A T = 25 C in a modified PHS test fixture. Dq h Mode of operation f P G ACPR L(AV) p D 600 (MHz) (W) (dB) (%) (dBc) PHS 1880 to 1920 9 16 20 75 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features Excellent back-off linearity Typical PHS performance at a supply voltage of 26 V and I of 1 A: Dq Average output power = 9 W Gain = 16 dB (typ) Efficiency = 20 % ACPR = 75 dBc 600 Easy power control Excellent ruggedness High power gain Excellent thermal stability Designed for broadband operation (HF to 2200 MHz)BLF3G21-30 UHF power LDMOS transistor No internal matching for broadband operation ESD protection 1.3 Applications RF power amplifiers for GSM, PHS, EDGE, CDMA and W-CDMA base stations and multicarrier applications in the HF to 2200 MHz frequency range Broadcast drivers 2. Pinning information Table 3. Pinning Pin Description Simplified outline Symbol 1 drain 1 1 2 gate 1 3 source 3 2 3 2 sym112 1 Connected to flange 3. Ordering information Table 4. Ordering information Type number Package Name Description Version BLF3G21-30 - flanged LDMOST ceramic package 2 mounting holes SOT467C 2 leads 4. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 65 V DS V gate-source voltage - 15 V GS I drain current - 4.5 A D T storage temperature 65 +150 C stg T junction temperature - 200 C j BLF3G21-30 2 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 2 1 September 2015 2 of 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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